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Infineon’s cool 1200V SiC JFET family moves power into the next dimension


INFINEON TECHNOLOGIES has unveiled the new CoolSiC 1200V SiC JFET family.


Infineon says its revolutionary new product line takes advantage of more than a decade of its experience in SiC technology development as well as high quality, high volume production.


“Infineon has a strong track record in launching break-through technologies aimed at markets requiring highly efficient power management. CoolSiC is again a revolutionary, highly innovative technology specifically designed for reaching new levels of performance in solar inverters,” comments Jan-Willem Reynaerts, Product


Infineon’s T0-247 CoolSiC 1200V device


Segment Head of High Voltage Power Conversion at Infineon. “With Infineon’s new SiC JFET technology we enable our customers to further shape the future of climate saving solutions.”


The new CoolSiC 1200V SiC JFETs have dramatically lower switching losses compared to IGBTs, which allow higher switching frequencies to be used without sacrificing overall system efficiency. This enables the use of much smaller passive components, which result in smaller overall solution size, lower weight and reduced system cost.


Alternatively, a higher output power solution can be realised within the same inverter housing.


In order to ensure that the normally-on JFET technology is safe and easy to use, Infineon has developed a concept called Direct Drive Technology.


In this, the JFET is combined with an external Low Voltage MOSFET and a dedicated Driver IC which ensures safe system start-up conditions as well as fast and controlled switching.


The CoolSiC JFET features a monolithically integrated body diode that has a switching performance comparable to an external SiC Schottky barrier diode. This combination is claimed to offer the utmost in efficiency, reliability, safety and ease of use.


10 www.compoundsemiconductor.net June 2012


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