CONNECTING THE COMPOUND SEMICONDUCTOR COMMUNITY Volume 18 Number 4


contents industry & technology 14


20 26


30 36


42 news


06 07


08 09


Transphorm delivers highest performance 600 V GaN-on-silicon products


Toshiba invests in Bridgelux to make the best 8” GaN-on-Silicon LEDs


SETi & Cascade to develop UV LEDs for water purification


SemiSouth brings on 650 V 55mΩ SiC JFETs


10 11


12 13


Infineon's cool 1200 V SiC JFET family moves power into the next dimension


API secures $1.5 million funding for F-35 aircraft quality control


Soraa unveils first full spectrum LED MR16 lamp


SPTS wins China over with its PVD technology


10 13 June 2012 www.compoundsemiconductor.net 5 06 07


The challenges for going green Green GaN lasers are very different from their red and infrared III-V cousins: They are strained, plagued by strong internal electric fields and have massive band offsets. But if you can understand these traits and use some of them to your advantage, it is possible to design devices for plugging the green gap.


Gallium oxide trumps traditional wide bandgap semiconductors Transistors built from Ga2


O3


have tremendous


potential. They have a far higher electric field strength than those made from GaN and SiC, and they can be formed from native substrates produced with simple, low-cost methods.


III-Vs and the silicon roadmap Silicon foundries could switch production from silicon MOSFETs to those based on III-Vs and germanium by the end of this decade.


Abolishing copper interconnects Rocketing demands for data transfer are signaling a switch from copper interconnects to those based on optical fiber.


III-V shares head south During the last 12 months the share prices of all the leading III-V chipmakers have plummeted. But why has the value of some companies dropped by just a few percent,while others have fallen by more than two-thirds?


Research Review Saturation of radiative recombination gets the blame for LED droop; Mechanical transfer with boron nitride; Slashing defects in GaN-on- sapphire films; Breaking conventional concepts in SiGe thermoelectric materials.


30 36 14


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