news review
SPTS wins China over with its PVD technology
SPTS TECHNOLOGIES has announced that its Sigma fxP PVD system had been selected by a Chinese foundry dedicated to producing RF devices on GaAs substrates. The system will be used to deposit front and backside metal layers including integrated passives for producing monolithic microwave integrated circuits.
China is one of the world’s fastest growing markets for mobile phones, and increasing counts of GaAs-based switches and power amplifiers appear in every handset.
SPTS says its production platform, the Sigma fxP system, provides many capabilities for GaAs based RFIC fabrication. “SPTS is proud to be part of China’s developing compound semiconductor device manufacturing industry,” says Kevin T. Crofton, executive vice president and chief operating officer at SPTS. “We look forward to contributing to our customer’s success in their production ramp.”
This is SPTS’ second new Chinese customer announcement in
RFMD's new rGaN-HV process for power devices
RF Micro Devices has extended its GaN process portfolio to include a new technology optimised for high voltage power devices in power conversion applications. RFMD's newest GaN process technology, known as "rGaN-HV", is claimed to enable substantial system cost and energy savings in power conversion applications ranging from 1 to 50 KW. The rGaN-HV delivers device breakdown voltages up to 900 V, high peak current capability, and ultra-fast switching times for GaN power switches and diodes.
The new technology complements RFMD's GaN 1 process, which is optimised for high power RF applications and delivers high breakdown voltage over 400 volts, and RFMD's GaN 2 process, which is optimised for high linearity applications and delivers high breakdown voltage over 300 volts. RFMD will manufacture discrete power device components for customers in its Greensboro, NC, wafer fab facility and provide access to rGaN-HV to foundry customers for their customised power device solutions.
Bob Bruggeworth, President and Chief Executive Officer of RFMD, comments, "The global demand for energy savings through improved power conversion efficiency is creating a tremendous opportunity for high-performance power devices based on RFMD's GaN power process technologies. We expect our newest GaN power process will expand our opportunities in the high-voltage power semiconductor market, and we are pleased to provide access to rGaN-HV to our external foundry customers to support their success in the high-performance power device market."
RABOUTET S.A.
250 Av Louis Armand Z.I Des Grand Prés F-74300 Cluses France Tél : 33 (0)4 50 98 15 18 Fax : 33 (0)4 50 98 92 57 E-mail :
info@raboutet.fr http://www.raboutet.fr
June 2012
www.compoundsemiconductor.net 13
recent weeks, following a previous announcement from the Shanghai Institute of Microsystem and Information Technology selection of a SPTS’ Primaxx Monarch 3 dry release system for MEMS. Chinese domestic production of such components will grow to serve the China market, the world’s largest consumer of handsets. The Sigma fxP is a single-wafer cluster tool designed for high-volume PVD processing. The flexible system supports various process chamber configurations and combinations to address a large variety of specific applications.
Deposition process modules are based on a standard design that enables simple technology upgrades. Key applications for the Sigma fxP include thick aluminium alloys for power device and next generation CMOS bondpad and metal seeds for advanced packaging applications.
RABOUTET S.A.
Manufacturer of Molybdenum. Components for MBE. Specialized Cleaning & Degassing available.
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