11-06/07 :: June/July 2011
Gigaphoton has been working on the development of laser-produced plasma (LPP) light sources for EUV lithography with its unique technologies in pursuit of higher output and better CoO since 2002, and proposed a number of unique technologies including mitigation of debris by using magnetic fields.
This announcement confirms that Gigaphoton has proven in production-level light sources that its technology of debris mitigation with magnetic fields, which had been verified a number of times, is ca- pable of removing 92% of debris. Therefore, it has made a significant step toward initial shipment of a mass production model in the beginning of 2012.
T Solar International, Inc. (NASDAQ: SOLR) has received orders from two new customers in
Asia for polysilicon production equipment tota- ling $81.7 million. The recent orders include GT’s hydrochlorination equipment used for the produc- tion of TCS as well as other polysilicon production equipment. The orders will be included in GT Solar’s backlog for its first quarter of FY12, which ended on July 2, 2011.
GT Solar International, Inc. is a global provider of polysilicon production technology, and sapphire and silicon crystalline growth systems and materials for the solar, LED and other specialty markets. GT Solar will be changing its name to GT Advanced Techno- logies.
BM (NYSE: IBM) today announced second-quarter 2011 diluted earnings of $3.00 per share, compa-
red with diluted earnings of $2.61 per share in the second quarter of 2010, an increase of 15 percent. Operating (non-GAAP) diluted earnings were $3.09 per share, compared with operating diluted earnings of $2.62 per share in the second quarter of 2010, an increase of 18%.
Second-quarter net income was $3.7 billion compa- red with $3.4 billion in the second quarter of 2010, an increase of 8 percent. Operating (non-GAAP) net income was $3.8 billion compared with $3.4 billion in the second quarter of 2010, an increase of 11%.
Total revenues for the second quarter of 2011 of $26.7 billion increased 12% from the second quarter of 2010.
mec has successfully printed first Extreme-Ultravi- olet (EUV)-light wafers with the ASML NXE:3100
preproduction scanner using XTREME technologies (a wholly owned subsidiary of Ushio Inc.) Laser assi- sted Discharge Plasma (LDP) source. The tool shows significant improvement in throughput and overlay compared to ASML’s Alpha Demo Tool (ADT). The exposure rate of the NXE:3100 today is already 20 times faster than that of the EUV ADT. A first test of dedicated chuck overlay showed the potential to achieve the <4nm target, which is significantly better than the ADT. The NXE:3100 integrates 4 image and 4 dose control sensors which were developed within imec’s CMORE development and prototyping service. Installation of these new sensors combined with new