Vendor View
Small Area Depth Profiling Investigation of processing faults, dopant checks and contamination issues often requires analysis of specific device areas. In many cases there is only a single site available on each device wafer. The challenge for the analyst is to ensure
precise alignment of the analysing beam on the correct device location.
Solar Photovoltaics (PV)
“Solar cells, the basic elements of photovoltaics (PV), convert light energy directly into electric energy. This one-step process is clean and absolutely emission-free: it is a modular electricity source that can be installed in every power size from microwatt to multi-megawatt scales. Therefore it is ideally suited for distributed generation of electricity near the user, everywhere around the globe.”
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Fig. 8 (ABOVE and right) – Deep phosphorus profile (right) of a device area shown in the 3D map (above). The crater size is 70µm x 70µm
The European PV Industry Road Map One of the key priority areas identified in Solar PV technology is a better understanding of the role and functions of layers and junctions in thin film PV devices. Surface analysis techniques, particularly SIMS, will therefore play a key role in furthering this aim. Cadmium telluride (CdTe) thin films are currently receiving considerable attention in PV technology since CdTe has the advantage of a direct bandgap which matches well with the solar spectrum. It has a high
profiles show the change in the phosphorus distribution within the SiGe layer, in the depth range 100nm – 120nm, resulting from diffusion during annealing at 680oC for 60 seconds.
This diffusion of phosphorus reduces the n- type doping and also causes compensation of the carriers in the boron-doped layer.
Fig. 9 – Profile of a CdTe solar cell device
www.euroasiasemiconductor.com Issue IV 2010
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