Vendor View
SIMS characterisation 23
There are many areas of consideration for IC manufacturers in order to improve their products. The ability to characterise materials throughout the process is a key factor in understanding and improving the manufacturing outcomes. Dr. Alan Brown of CERAM discusses how the company has developed characterising methods for a variety of applications.
S
econdary Ion Mass Spectrometry (SIMS) is one of the most important characterisation tools in the semiconductor industry and provides: Dopant and impurity depth profiling of silicon, III-V and II-VI substrates
Analysis of thin film structures (dielectric materials, SiGe, III-V, and II-V)
Ultra-high depth resolution profiling of shallow implants and films
Calibration of ion implantation tools Failure analysis studies on devices.
SIMS has several key features which specifically benefit the industry and include: Detection sensitivity for dopants and impurities in the ppm – ppb range
Quantitative depth profiling with nm scale depth resolution
Detection of all elements and isotopes, including H
Excellent dynamic range (up to 6 orders of magnitude)
Small-area analysis on device features.
Semiconductor device technology continues to advance with scaling to smaller dimensions, allowing for greater device density and higher switching speeds. As the technology has moved through the 130, 90 and 65nm nodes there has been a consequential demand for new materials to counteract the effects of shrinking dimensions.
At the same time, developments in solar
Fig. 1 – 3D
topographical image of precision SIMS depth profiling of multiple areas on a device structure
www.euroasiasemiconductor.com Issue IV 2010
Page 1 |
Page 2 |
Page 3 |
Page 4 |
Page 5 |
Page 6 |
Page 7 |
Page 8 |
Page 9 |
Page 10 |
Page 11 |
Page 12 |
Page 13 |
Page 14 |
Page 15 |
Page 16 |
Page 17 |
Page 18 |
Page 19 |
Page 20 |
Page 21 |
Page 22 |
Page 23 |
Page 24 |
Page 25 |
Page 26 |
Page 27 |
Page 28 |
Page 29 |
Page 30 |
Page 31 |
Page 32