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nitrogen distribution within a ~2nm thick insulating layer. ULE-SIMS provides an excellent method for investigating compositional information of Si, O and N on such thin materials. Fig. 5 shows a ULE-SIMS profile through an oxynitride layer with quantification of Si, O and N. The N concentration is approximately 10 atomic % at a depth of 0.7nm.
Silicon – Geranium - Quantum Wells Strained SiGe permits precise engineering of the semiconductor band gap, offering a route to high–speed devices which are compatible with existing silicon-based fabrication technology. Fig. 6 shows ULE-SIMS analysis of a SiGe
test structure, grown by gas source MBE. The ten Ge-containing layers are uniformly resolved through the profile. The device exhibited excellent optical properties, consistent with high quality Si/SiGe interfaces.
Fig. 4 – ULE-SIMS depth profile of processed low Energy B Implants in Si
and retained dose on these shallow materials requires the use of ultra-low energy ion bombardment for SIMS depth profiling. Fig. 4 shows the characterisation of an anneal sequence on a 1keV boron implant in silicon using 500eV O2+ ions.
Gate Dielectrics One of the most problematic effects of reducing the dimensions in semiconductor devices has been the increase in gate currents as gate dielectric layers are thinned. This has led to the ongoing development of new materials as potential gate dielectrics, including hafnium silicate (HfSiO). Silicon oxynitride (SiON) is one of the most researched silicon-based dielectrics used in current ultra large scale IC fabrication. Properties of the SiON films, e.g. stoichiometry and thickness, can be engineered to optimise performance in reducing boron penetration and dielectric leakage.
Characterisation of ultra-thin SiON gate dielectrics typically requires determination of the
SiGe Tunnelling Diode The inherent repeatability of SIMS measurements provides an excellent basis for comparisons between different processing treatments, e.g. diffusion studies. In Fig. 7, ULE- SIMS depth profiles an Esaki tunnelling diode, comparing before and after annealing. The
Fig. 5 – ULE-SIMS profile of SiON on Si
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Fig. 6 – ULE-SIMS profile of MBE Grown Si/SiGe Quantum Wells
Fig. 7 – ULE-SIMS profile of a SiGe tunnelling diode before and after annealing
www.euroasiasemiconductor.com Issue IV 2010
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