10-05/06 :: May/June 2010
than one nanometer – helps solve semiconductor scaling concerns that could affect the future perfor- mance and power usage of integrated circuits.
“The electron tomography technique is a powerful 3-D extension of the widely employed 2-D STEM technique, but leverages the related 3-D imaging advances used for CT scans and MRIs in the medi- cal field,” said Dr. Scott List, director of Intercon- nect and Packaging Sciences at SRC. “Sophisticated software extracts 3-D images from a series of 2-D images taken at multiple angles. A 2-D picture is worth a thousand words, but a 3-D image at near atomic resolution gives the semiconductor industry new insights into scaling low-k materials for several additional technology nodes.” Huolin L. Xin, Peter Ercius, Kevin J. Hughes, James R. Engstrom, and David A. Muller: Three-dimensional ima- ging of pore structures inside low-k dielectrics, In: Applied Physics Letters, Volume 96(2010), Issue 22, Article 223108 [3 pages], DOI:10.1063/1.3442496: http://dx.doi.org/10.1063/1.3442496
hrink Nanotechnologies, Inc. (OTCBB: INKN), an innovative nanotechnology company developing
products and licensing opportunities in the solar energy production, medical diagnostics and sensors, and biotechnology research and development tools businesses, announced that patent applications for its stem cell research and drug discovery tool Stem- Disc™ have been filed.
StemDisc is Shrink‘s latest bioscience application of its proprietary, patent-pending, advanced plastic material called NanoShrink™. StemDisc offers a low cost, flexible and cost effective solution for biotech researchers to conduct experiments for (i) drug
discovery, (ii) regenerative medicine (ii) and cancer research, among others. http://www.shrinknano.com
pire Corporation (NASDAQ: SPIR) announced its wholly owned subsidiary, Spire Semiconduc-
tor, LLC, has matched the current efficiency record for a concentrator solar cell. The record efficiency is available on a production ready cell with a photo area of 1.0 cm2
The U.S. Department of Energy‘s National Renew- able Energy Laboratory (NREL) measured the effici- ency of 41.0% at 500x suns concentrated sunlight. Spire Semiconductor began working with NREL under an 18-month, $3.7 million cost share subcon- tract in early-2009. The goal is to develop a triple junction, gallium arsenide (GaAs), 42.5% conversion efficient ‘Triathlon‘ concentrator cell for concentrator photovoltaic systems.
“This is truly an achievement,” said Roger G. Little, Chairman and CEO of Spire Corporation. “We have experienced continuous improvement in our propri- etary cell processing design technology throughout the NREL contract. We are excited to have matched the current world record efficiency, and we have nearly four months remaining under the subcontract to surpass this level and achieve the target 42.5% efficiency. A more efficient concentrator solar cell will provide a lower cost and more reliable source of solar generated electricity,” concluded Mr. Little. Furthermore, Underwriters Laboratories (UL) has once again selected Spire Corporation‘s world class SPI-Sun Simulator™ 4600SLP as a standard to test and certify PV modules. Already in use at UL facili- ties in the United States, China, and Germany, the Spire Simulator will now serve as the primary test