FIB Sanullle Preparation of Polynullr nullin Filnull on nullrd
Snullstrates nulling the Shadow-FIB Method
Snullan nullnull
null
nullnullo Linull
null
nulland nulldrew MnullMinor
null
null
1
nullepartment nullnull nullaterials nullcience and nullngineeringnull nullniversity nullnull nullalinullnullrnianull nullernulleley and nullatinullnal nullenter nullnullr
nulllectrnulln nullicrnullscnullpynull nullanullrence nullernulleley nullatinullnal nullanullnullratnullrynull nullernulleleynull nullnull 94720null
2
nullnvirnullnmental nullnergy nullechnnulllnullgies nullivisinullnnull nullanullrence nullernulleley nullatinullnal nullanullnullratnullrynull nullernulleleynull nullnull 94720
null
nullnullinnullr@lnulll.gnullv
Introdnulltion
nullshadnullnull nullnull the inulln nulleam snull the sutnull rate is milled nullenullnullre the
nullnullcused inulln nulleam (nullnull instrumentatinulln has prnullven tnull
nulllm. nullusnull nully changing the genullmetry nullnull the samplenull a hard
nulle enullremely usenullul nullnullr preparing crs-snull ectinullnal samples nullnullr
sutnull rate itselnull acts as a prnulltective layer nullnullr the pnulllymer nulllm.
transmissinulln electrnulln micrnullcnullpy (nullnull investigatinullns. nulle
nullnderstanding the micrtnull ructure nullnull pnulllymer thin nulllms
tnullnull mtnull nullidely used methnullds invnulllve milling a trench nulln
nulln hard sutnull rates is impnullrtant nullnullr many nullrganic electrnullnic
either side nullnull an electrnulln-transparent nullindnullnullnull the nullnullnullarnull and
applicatinullns. nullecause pnulllymers are easily damaged nully the
incident inulln nulleam nullnull strategies nullnullr limiting nullnull damage tnull
the nullinullnullutnull methnullds
nullnull nulllthnullugh these tnullnull methnullds are very
the pnulllymer thin nulllm are particularly impnullrtant. enull nullnull the
pnullnullernullul in their versatility and anullility tnull manulle site-specinull
main advantages nullnull nullnull preparatinulln nullnullr thin nulllm analysis is the
nullnull samplesnull they rely nulln using a sacrinullial layer tnull prnulltect
anullility tnull readily crs-snull ectinulln dissimilar materials. nullraditinullnal
the surnullce nullnull the sample as nullell as the remnullval nullnull a relatively
nullnull sample preparatinulln techninullues such as micrnulltnullmy nullr
large amnullunt nullnull materialnull depending nulln the sinull nullnull the initial
nullrnullad-nulleam inulln milling are nnullt ideal nullnullr crs-snull ectinullning all nullnull
sample. nulln this article nulle descrinulle a techninullue nullnullr manulling thin
the device cnullmpnullnents in a manner that retains the structure nullnull
nulllm crs-snull ectinullns nullith the nullnullnull nullnnullnulln as nullhadnullnull nullnullingnull that
all cnullmpnullnents enullually.
dnulles nnullt renulluire the use nullnull a sacrinullial layer nullr lnullng milling
nullharacterinulltinulln nullnull these cnullmplenull systems renulluires
times
nullnull nulln this techninulluenull the cnullrner nullnull a sample is pnullitinullned
investigatinulln nullnull the internal pnulllymer structure as nullell as
at an angle nullnull incidence nulletnulleen the inulln and electrnulln nulleams the internullce nulletnulleen the pnulllymer nulllm and the sutnull rate
in a dual-nulleam nullnullnull nullut nnullt nnullrmal tnull either nulleam. nulls seen nullnull nullnull understand the thinned micrtnull ructurenull a systematic
in nulligure 1null the thin nulllm is pnullitinullned such that it is in the
investigatinulln nullnull inulln nulleam damage tnull pnulllymers is renulluired. nulln
electron
nullanull
ion
nullanull
Before After
Fignulle null nullnullmatic onulltnull nulladonullnullB tecnullinulle nullr crossnullectional Tnull samnulle enullration. null In tnulls case, a tnulln nullm nullluenullis tilted so tnullt tnull surnullce is in tnull
nullnulldonull onulltnull ion beam, as seen in tnull nullenullrenullimanull at lenull. Tnulls nullometrnullallonull nullr tnull abilitnullto crossnullection a samnulle nulltnullut usinnulla sacrinullial lanullr or lonnull
millinnulltimes. Tnull ion beam is rastered on eitnullr side onulla corner onulltnull samnulle, resultinnullin an electronnullransnullrent nulldnull endinnullon tnull nullm surnullce, snullnull in tnull
nullnullernullimanull on tnull rinullt. Tnull annulle onullincidence onulltnull ion beam can be varied denullndinnullon tnull circumstances, as lonnullas it is directed om null tnull bacnull substratenullide.
20
doinullnull.nullnullnullnullnull929null999null0null
www.microscopy-today.com null nullnull nullvenuller
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