This page contains a Flash digital edition of a book.
Journal Highlights


Techniques and Instrumentation Development


Electron-Excited X-ray Microanalysis at Low Beam Energy: Almost Always an Adventure! by DE Newbury and NWM Ritchie, Micros Microanal 22 (2016) 735–53


“Low beam energy” x-ray microanalysis performed in the scanning electron microscope at landing energies E 0 ≤5 keV off ers improved lateral and depth resolution, typically sampling volumes with linear dimensions of a few hundred nanometers or less. Special analytical challenges arise because the reduced beam energy can only stimulate x rays from low-ionization-energy atomic shells. T us, transition metals usually analyzed with K-shell x rays must instead be analyzed with L-shell x rays, while for intermediate and high atomic number elements the M-shell must be used. Low photon energy x-ray families have low yield and complex, variable shapes from multiple, closely spaced peaks. Nevertheless, accurate quantitative analysis (relative to elemental and simple compound standards) can oſt en be achieved by employing the peak fi tting and matrix correction procedures embedded in the NIST DTSA-II EDS analysis and modeling soſt ware engine. Other challenges to analytical interpre- tation arise because surface layers such as natural oxides, which are so thin as to be insignifi cant at high beam energy (E 0 ≥10 keV), account for a much larger fraction of the material sampled at low beam energy. Iterative DTSA-II analysis must be performed wherein the residual spectrum aſt er peak fi tting is inspected for peaks of unanticipated constituents.


Monte Carlo simulation (NIST DTSA-II) of electrons bombarding a 100 nm cube of SiO 2 in a Cu matrix. At 5 keV, electrons penetrate the SiO 2 cube and excite Cu x rays, but at 2.5 keV few electrons reach the Cu, so the Cu peak is barely detectable above background.


PELCO Silicon Nitride ®


Vibrations Bad for Without Minus K® With Minus K®


Great for Images www.minusk.com


2017 January • www.microscopy-today.com


Holey SiN Substrates


Silicon Dioxide Substrates





Robust and clean 8, 15, 50 and 200nm SiN substrates


50 tes


 Ø3.0mm frame 





EasyGrip™edges  Free from debris


Super flat 8, 15, and 40nm silicon dioxide substrates


m es


& Silicon Dioxide Membranes Next Generation SiN TEM Support Films


TED PELLA, INC. Microscopy Products for Science and Industry


www.tedpella.com sales@tedpella.com 800.237.3526 55


Page 1  |  Page 2  |  Page 3  |  Page 4  |  Page 5  |  Page 6  |  Page 7  |  Page 8  |  Page 9  |  Page 10  |  Page 11  |  Page 12  |  Page 13  |  Page 14  |  Page 15  |  Page 16  |  Page 17  |  Page 18  |  Page 19  |  Page 20  |  Page 21  |  Page 22  |  Page 23  |  Page 24  |  Page 25  |  Page 26  |  Page 27  |  Page 28  |  Page 29  |  Page 30  |  Page 31  |  Page 32  |  Page 33  |  Page 34  |  Page 35  |  Page 36  |  Page 37  |  Page 38  |  Page 39  |  Page 40  |  Page 41  |  Page 42  |  Page 43  |  Page 44  |  Page 45  |  Page 46  |  Page 47  |  Page 48  |  Page 49  |  Page 50  |  Page 51  |  Page 52  |  Page 53  |  Page 54  |  Page 55  |  Page 56  |  Page 57  |  Page 58  |  Page 59  |  Page 60  |  Page 61  |  Page 62  |  Page 63  |  Page 64  |  Page 65  |  Page 66  |  Page 67  |  Page 68