Electronics Industry Awards 2022
Next-generation GaN technology delivers unmatched performance and reliability
discharge (ESD) specification of 2 kV, and the highest dV/dt immunity.
T
he NV6169 GaNFast power IC with GaNSense technology is Navitas’ highest-power-rated IC to date, delivering unmatched performance and reliability compared to
‘discrete’ GaN and legacy silicon chips. Ideal for higher-power applications such as data centers, solar energy and EVs, this device comes with an unprecedented 20-year limited warranty to further accelerate GaN adoption into these more demanding systems. Gallium nitride (GaN) is a next-generation ‘wide band-gap’ semiconductor that is replacing legacy silicon chips in power electronic systems. GaNFast power ICs integrate GaN power and drive, plus control, sensing and protection, enabling systems
that consume less energy, require fewer electronic components (e.g. magnetics, filters, capacitors) and are more cost-effective. In addition, by minimizing mechanical overheads such as PCB size, metal/plastic housings and the need for heatsinks, integrated GaN devices offer further sustainability and CO2 benefits in terms of reduced material and shipping requirements.
Based on the company’s most advanced, third-generation integrated GaN platform, GaNFast power ICs with GaNSense technology feature loss-less current sensing and the world’s fastest short-circuit protection, with a ‘detect-to-protect’ speed of only 30 ns, 6x faster than discrete solutions. The device is packaged in an industry-standard, low-profile,
low-inductance, 8 x 8 mm PQFN package for high-efficiency, high-density power systems. Due to their superior switching capability, GaN ICs enable higher-frequency operation that helps designers shrink magnetics and other passive components to enable dramatic reductions in system size, cost and weight while increasing power density. Navitas devices offer both improved performance and higher reliability than unprotected ‘discrete’ GaN or silicon chips.
The NV6169 is rated at 650 V for nominal operation plus an 800 V peak-rating for robust operation during transient events. As a truly-integrated power IC, the GaN gate is fully-protected and the whole device rated at an industry-leading electrostatic-
GaN benefits Mobile: Over 200 mobile chargers are in production using GaNFast devices and 240 more are in development. Applying GaN to every mobile application would save over 9 billion kWh and over 6 billion kg of CO2 by 2025, equivalent to 1.3 million ICE passenger vehicles or almost 14 billion barrels of oil. Data Centers: Upgrading from legacy silicon to high-efficiency GaN in data centers can reduce electricity use by up to 10 per cent – an improvement that if applied across all data centers could reduce energy demand by over 15 TWh, save $1.9B in annual electricity costs and reduce CO2 by 10 Mtons – or the equivalent annual emissions of over two million gasoline-based passenger vehicles. Solar Power: GaN power ICs drive down cost-per-watt of energy conversion and storage to support cost reductions of up to 25 per cent – reducing payback periods and accelerating adoption of solar energy. EV: A transition from silicon to GaN power ICs could accelerate world-wide adoption of EVs by three years and reduce road-sector emissions by 20 per cent/year by 2050. Navitas became the world’s first semiconductor company to achieve CarbonNeutral company status from leading experts. Each GaNFast power IC shipped saves net 4 kg CO2 and offers the potential to address a reduction of 2.6 Gtons CO2 / year by 2050.
Check out:
www.navitassemi.com for more information.
8 EIA Supplement 2022
Components in Electronics
electronicsindustryawards.co.uk
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