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nanotimes Patents

Project Status A prototype is under construction.A German patent application was filed. There is another national appli- cation in the USA. Owner of the patent is the Johann Wolfgang Goethe-University Frankfurt am Main. Licensing or assignment of the technology is possible as well as a cooperation for further de-velopment of the invention.

The novel THz system (image right) uses an OPO to generate THz radiation and coherently detects both phase and intensity of the THz signal. A laser-genera- ted pump beam is used for the optical parametrical process generating a THz signal and the so called idler beam. The frequency of the THz signal corre- sponds to the difference of the frequencies of pump and idler beam. The frequency of the THz wave is widely tunable by adjusting the angle between pump beam and crystal axis of OPO. Part of pump radiati- on and idler wave are spatially superposed producing a heterodyne beat which corresponds to the fre- quency of the THz signal.

Contact: INNOVECTIS Gesellschaft fuer Innovations-

Dienstleistungen mbH, 60438 Frankfurt am Main, Germany, Phone (069) 25 61 632-0: http://www.innovectis.de

http://www.hipo-online.net/files/0058_Dauerstrich_ engl_c_020211.pdf

Picture of the prototype GaN Gunn diodes on a GaN substrate from a scanning electron microscope. On the top of the diode is an ohmic contact made of Ti/ Al/Ti/Au. Underneath is the anode made from a thin highly doped n++ GaN layer. © TransMIT

11-01 :: December 2010 / January 2011

Gunn Diode on GaN Substrate for the Generation of High Frequency Signals With High Power