search.noResults

search.searching

saml.title
dataCollection.invalidEmail
note.createNoteMessage

search.noResults

search.searching

orderForm.title

orderForm.productCode
orderForm.description
orderForm.quantity
orderForm.itemPrice
orderForm.price
orderForm.totalPrice
orderForm.deliveryDetails.billingAddress
orderForm.deliveryDetails.deliveryAddress
orderForm.noItems
Page 6 Continued from page 1


Published By: Mid-Atlantic Tech Publications, Inc. Phoenixville, PA 19460 Established January, 1986


U.S. TechWorld HQ Advertising&Editorial Offices


U.S. Tech 10 Gay Street Phoenixville, PA 19460


Phone: Fax:


E-mail: Web:


(610) 783-6100 (610) 628-3891


mail@us-tech.com www.us-tech.com


Publisher and President: Jacob Fattal


Office Manager: Ruri Chandra


Editor Emeritus: Walter Salm


Editor: Michael Skinner


Art Director: Mike Swavola


VP Sales and Marketing: Jeffrey Pulaski


Cartoonist: Ted Goff


Copyright © 2024 Mid-Atlantic Tech Publications, Inc. Contents not be reproduced or reprinted in any form without written permission from the publisher. Opinions expressed on Tech Op-Ed pages and by our colum- nists are the views of the person or per- sons authoring the material.


and memristors, technologies that will be critical to constructing more advanced electronics.


2D Electronics In the ongoing search for


smaller, faster and more efficient electronics, the final step will be devices made with materials just one or two atoms thick. It is im- possible for devices to be smaller than this limit, and their small scale often makes them operate much quicker and consume far less energy. While ultrathin semiconductors have been exten- sively studied, it is also neces- sary to have atomically thin in- sulators — materials that block electric currents — to construct working electronic devices like transistors and memristors. Atomically thin layers of


carbon with disordered atomic structures can function as an ex- cellent insulator for constructing two-dimensional devices. The re- searchers in the collaboration have shown that such carbon layers can be formed from carbon dots derived from coal char. To demonstrate their capabilities, the U. of I. group led by Cao de- veloped two examples of two-di- mensional devices. “It’s really quite exciting, be-


cause this is the first time that coal, something we normally see as low-tech, has been directly linked to the cutting edge of mi- croelectronics,” Cao says.


Transistor Dielectric Cao’s group used coal-de-


rived carbon layers as the gate dielectric in two-dimensional transistors built on the semimet- al graphene or semiconductor molybdenum disulfide to enable


www.us-tech.com


more than two times faster de- vice operating speed with lower energy consumption. Like other atomically thin materials, the coal-derived carbon layers do not possess “dangling bonds,” or elec- trons that are not associated with a chemical bond. These sites, which are abundant on the surface of conventional three-di- mensional insulators, alter their electrical properties by effective- ly functioning as “traps,” slowing down the transport of mobile charges and thus the transistor switching speed. However, unlike other atomi-


cally thin materials, the new coal- derived carbon layers are amor- phous, meaning that they do not possess a regular, crystalline structure. They therefore do not have boundaries between differ- ent crystalline regions that serve as conduction pathways leading to “leakage,” where undesired elec- trical currents flow through the insulator and cause substantial additional power consumption during device operations.


Memristor Filament Another application Cao’s


Jan/Feb, 2024 Better Microelectronics...from Coal?


group considered is memristors — electronic components capable of both storing and operating on data to greatly enhance the im- plementation of AI technology. These devices store and repre- sent data by modulating a con- ductive filament formed by elec- trochemical reactions between a pair of electrodes with the insu- lator sandwiched in between. The researchers found that


the adoption of ultrathin coal-de- rived carbon layers as the insula- tor allows the fast formation of such filament with low energy consumption to enable high de- vice operating speed with low power. Moreover, atomic size rings in these coal-derived car- bon layers confine the filament to enhance the reproducible de- vice operations for enhanced da- ta storage fidelity and reliability. The new devices developed


by the Cao group provide proof- of-principle for the use of coal-de- rived carbon layers in two-di- mensional devices. What re- mains is to show that such de- vices can be manufactured at scale.


Web: www.illinois.edu r Global Semicon Capacity Continued from page 1


strategic importance of semicon- ductor manufacturing to national and economic security is a key cat- alyst of these trends.” Covering 2022 to 2024, the


World Fab Forecast report shows that the global semiconductor in- dustry plans to begin operation of 82 new volume fabs, including


to Reach Record High 11 projects in 2023 and 42 proj- ects in 2024 spanning wafer sizes ranging from 300 to 100 mm.


China Leads Boosted by government


funding and other incentives, China is expected to increase its share of global semiconductor production. Chinese chip manu- Continued on page 8


Contents


Tech-Op-Ed ........................... 4 Tech Watch ............................10 People.................................... 12 Business News.......................14 Business Briefs..................... 15 Management.......................... 16 EMS ..................................... 18 Electronic Mfg. Prods............ 28 Production............................. 50 Partnering.............................. 52 Distribution............................ 54 New Products....................... 74 High-Tech Events...................84 2024 Editorial Calendar......... 84 Advertisers Index.................... 86


Product Preview: IME West................................ 66


Special Focus: Components & Assembly...... 56


See at IME West, Booth 1833


Page 1  |  Page 2  |  Page 3  |  Page 4  |  Page 5  |  Page 6  |  Page 7  |  Page 8  |  Page 9  |  Page 10  |  Page 11  |  Page 12  |  Page 13  |  Page 14  |  Page 15  |  Page 16  |  Page 17  |  Page 18  |  Page 19  |  Page 20  |  Page 21  |  Page 22  |  Page 23  |  Page 24  |  Page 25  |  Page 26  |  Page 27  |  Page 28  |  Page 29  |  Page 30  |  Page 31  |  Page 32  |  Page 33  |  Page 34  |  Page 35  |  Page 36  |  Page 37  |  Page 38  |  Page 39  |  Page 40  |  Page 41  |  Page 42  |  Page 43  |  Page 44  |  Page 45  |  Page 46  |  Page 47  |  Page 48  |  Page 49  |  Page 50  |  Page 51  |  Page 52  |  Page 53  |  Page 54  |  Page 55  |  Page 56  |  Page 57  |  Page 58  |  Page 59  |  Page 60  |  Page 61  |  Page 62  |  Page 63  |  Page 64  |  Page 65  |  Page 66  |  Page 67  |  Page 68  |  Page 69  |  Page 70  |  Page 71  |  Page 72  |  Page 73  |  Page 74  |  Page 75  |  Page 76  |  Page 77  |  Page 78  |  Page 79  |  Page 80  |  Page 81  |  Page 82  |  Page 83  |  Page 84  |  Page 85  |  Page 86  |  Page 87  |  Page 88