PRODUCTS EDITOR’S CHOICE
ENHANCED (GAN)-ON-SILICON TECHNOLOGY I
Infineon Technologies has announced the expansion of its
Gallium Nitride (GaN)-on-Silicon technology and product portfolio. The company now offers both enhancement mode and cascode configuration GaN-based platforms optimised for high performance applications requiring superior levels of energy efficiency including Switch Mode Power Supplies (SMPS) used in server, telecom, mobile power and consumer goods such as Class D Audio systems. GaN technology significantly reduces the size and weight of power supplies which will open up new opportunities in end-products such as ultra-thin LED TVs. Infineon’s expanded offering will
include dedicated driver and controller ICs which enable the topologies and higher frequencies that fully leverage the benefits of GaN. The offering is further enhanced by a broader patent portfolio, GaN-on-Silicon epitaxy process and 100V-600V technologies resulting from the acquisition of International Rectifier. Additionally, through a strategic
partnership with Panasonic Corporation, Infineon and Panasonic will jointly introduce devices utilising Panasonic’s normally-off (enhancement mode) GaN-on-Silicon transistor structure integrated into Infineon’s Surface Mount Device (SMD) packages. GaN-on-Silicon-based
technology delivers increased power density and higher energy efficiency in a smaller footprint compared to Silicon-based solutions, and is, therefore, well suited to a wide range of applications from consumer goods. According to an IHS market research report, the GaN-on- Silicon market for power semiconductors is expected to grow at a compound annual growth rate (CAGR) of more than 50 percent, leading to an extension of volume from US$15 million in 2014 to US$800 million by 2023.2.3V to 3.6V.
Infineon Technologies
www.infineon.com/gan
NANOCOATINGS PROTECT HEARING DEVICES
Belgium based Europlasma has developed nanocoating technologies to protect hearing devices against corrosion and damage from liquids. The Nanofics 110 coatings are highly
PRECISION ASSEMBLY OF PERFORMANCE-CRITICAL PARTS
An Assembly Cell has been introduced by JOT Automation that aims to speed up the precision assembly of performance-critical components of smart devices and improves the outgoing quality of production. The JOT V4 Assembly Cell automated solution enables global consumer brands to ship ever smarter and smaller devices in the time-to-market with superior quality and lower costs from anywhere in the world. “People cannot do the fine tasks that are called for assembling next-generation smartphones and tablets. In fast-paced mass production, it’s impossible for humans to meet with bare hands the less than 0.1mm assembly tolerances, commonly used in the 3C (computer, communication and consumer electronics) industry,” said Ville Vatanen, Director at JOT Automation. “With our machine vision guided assembly cell, the assembly of small, performance-critical components,
like cameras, microphones, speakers, touch screens and vibras, is made reliable and easy, no special operator skills are needed. Simplicity has been our main principle when designing the next-generation assembly cell.” The JOT V4 Assembly Cell, based on standard modules, is applicable for dozens of applications. The most
suitable modules can be flexibly and cost effectively picked to current use. There’s no need to buy features not needed in production at the time. The customer can choose the modules needed according to their requirements, allowing machine functionality to be easily fine-tuned for future assembly and volume needs. Furthermore, the desktop solution fits all factory layouts due to its numerous feeding options and minimal footprint of 0.35m².
JOT Automation
www.jotautomation.com
water repellent (water contact angle of 110 degrees according to ASTM D5946) and highly oil repellent (oil repellency level 6 according to ISO 14419) fluoropolymer type of nanocoatings deposited by low pressure plasma technology. The unique aspect of these coatings is that they are completely free from PFOA and PFOS. Traditional nanocoatings with high levels of water and oil repellency are derived from long molecular chains which contain traces of PFOA and PFOS.
www.europlasma.be
Innovnano has developed nanostructured monoclinic zirconia with enhanced properties for use as a sintering aid in the production of high quality refractory materials. With applications in steel foundries amongst others, the enrichment of materials with the company's nanostructured monoclinic zirconia supports optimised performance and resilience for physically demanding applications. This can help improve component lifetime, and reduce overall costs.
www.innovnano-materials.com
CVD TECHNIQUE ADVANCES CAPABILITY OF GRAPHENE
Helping industry unlock graphene’s potential, 2- DTech has made further advances in the fabrication of graphene products using chemical vapour deposition (CVD) techniques. Using its state-of-the-art CVD chambers and associated hardware, the company is now able to deliver high quality graphene films. Its CVD graphene exhibits an industry-leading degree of consistency in terms of low defect density and high mobility. Customers can expect an average mobility value of approximately 2250cm2
/V.s. The company is able to supply its CVD
graphene products in a range of different sizes and on a variety of substrates. They can be grown on to copper substrates with dimensions reaching
6 SPRING 2015 | MICROMATTERS
100mm by 200mm. Alternatively its CVD graphene can be transferred onto various other substrates measuring up to 40mm by 40mm, including SiO2
and an array of customer requested materials. These products can be incorporated into
photovoltaic, electronic and sensor devices in either graphene-only or multi-layer hetereostructure systems (where graphene is combined with other 2-D materials, such as the insulating hBN or the semiconducting MoS2). “The quality of our CVD graphene has already
enabled us to add highly regarded academic establishments and prestigious research institutions. 2-DTech
www.2-dtech.com
/ MiICROMATTERS , exfoliated hBN deposited on SiO2
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