Cover Story
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contenders to eventually replace the memory architectures that are currently dominant. MRAM, for example, which stores data on thin film elements, is certainly being touted as a replacement for DRAM in certain applications, and although the technology is still being refined to offer the same performance as DRAM, it is already being used in niche applications. Looking at ReRAM, the list of materials that
are potentially viable are largely the same as those used for DRAM and their properties are already well-known, so there is an opportunity of assessing the suitability of already developed molecules than having to start from scratch to invent brand new ones.
Making use of chalcogenide glass, PCM works in ways similar to that of rewritable CDs or DVDs and has emerged as a more than a credible substitute for NAND. PCM manufacturers have claimed that it can be used not only as a significantly superior substitute for Flash memory but as a substitute for current
DRAM applications as well. Enabling the manufacturing of new types of
memory presents its own set of significant challenges. MRAM, for example, uses new metal oxides and magnetic resistive layers, so materials suppliers are developing new chemistries that will remove residues from the manufacturing process without causing damage to the layers.
On the horizon?
At some point, it will be physically impossible to continue along the trajectory of Moore’s Law. Many researchers are already looking beyond this horizon at new developments that could well take us beyond Moore’s Law. Referencing the ITRS’ ERD and ERM
Working Groups, in 2010 they assessed the potential and maturity of eight emerging research technologies and set certain parameters on which each technology would be assessed for future development, stating that “to be considered for increased focus, the
www.euroasiasemiconductor.com Issue IV 2011
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