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TELEFUNKEN Semiconductors Reached a Significant Milestone with SiGe Power
HBT - 13 Jan, 2010
TELEFUNKEN Semiconductors announced GHz and sufficient power capability. TELEFUNKEN Semiconductors foundry is a
today that they have achieved a run rate of TELEFUNKEN Semiconductors offers specialty Analog & Mixed Signal facility with
>100 million units per year supply to their world class HICUM models for HBTs with ISO Automotive and Industrial Class
customers of high performance SiGe power Monte-Carlo-Simulations based on Certifications. TS offers state-of-the-art
ICs utilizing HBT technology. production statistics. The cost efficient contract semiconductor foundry services at
high speed SiGe power technology is their world class manufacturing location in
This is a significant milestone in Foundry eminently well-suited for applications in the Heilbronn, Germany.
business and validates excellent features of area of telecommunications and high-speed
TELEFUNKEN’s low cost SiGe power HBT data transfer such as DECT™, CDMA, The Foundry Group services a range of
technology in comparison to high cost III-V- 5.8-GHz WLAN and power amplifier customers with reliable wafer production
based (GaAs, InP, GaN) HEMT technology (WCDMA, 802.11, Bluetooth range from 0.8µm to 0.35µm.
and market acceptance and market share extension, etc.
gains of their technology. TELEFUNKEN TS processes allow us to offer World Class
Semiconductors’ SiGe HBT process is in A volume of 100 million units per year Analog & Mixed Signal Foundry Services for
manufacturing in Heilbronn, Germany, since demonstrates the manufacturing capabilities RF, Power Management, and High Voltage
1998. With SiGe PDKs, TS customers are of TELEFUNKEN Semiconductors and High Temperature Automotive Applications.
able to design high performance integrated acceptance of SiGe as the industry The wafers are produced in 6 in inch and
circuits with analog frequencies up to 80 standard for wireless amplification. will be available in 8 inch by Q3 of 2010.
Siklu Announces Industry’s First SiGe Based E-band Transceiver for
Wireless Backhaul - 13 Jan, 2010
Siklu today announced the availability of a 70 GHz SiGe low-cost technology, involving a state-of-the-art process technology, and a
transceiver for high-speed applications that use the licensed 71 to novel RF and system design to offer a full suite of high-speed radio
76 GHz spectrum. Designed with a high level of integration and links at a fraction of the price of any available radio today,” stated Izik
based on SiGe technology, Siklu’s transceiver is the first of such Kirshenbaum, Siklu’s Co-Founder and CEO. “Given this integration
kind in the industry. The transceiver is the main building block in a advantage that results in an truly innovative system design, mobile
series of technology and concept breakthroughs that will enable a operators can capitalize on the massive bandwidth available in the
revolution in cost and power for wireless backhaul. “Until now, 70 millimeter wave spectrum in the most cost-efficient way.”
GHz products have been severely constrained by the high cost of
the radios, based on Gallium Arsenide or Indium Phosphide Siklu will announce the first application of this transceiver at Mobile
modules. Siklu’s integrated transceiver uses Silicon Germanium World Congress in Barcelona, Spain in mid-February.
Cree Announces Sample Availability of Two
New GaN HEMT Transistors - 13 Jan, 2010
Cree announces the sample release of two A demonstration amplifier using the new marine radar. The CGH31240F, operating
new GaN HEMT transistors, expanding the transistor, at 28 volts operating voltage, at 28V, offers over 10dB power gain while
power range and addressable applications provided a 2 to 6 GHz instantaneous providing over 240 Watts saturated
of the Cree product family. The bandwidth achieving 12 dB average small power with greater than 50 percent
CGH40006P is a 6-Watt GaN HEMT signal gain and 8 Watts typical saturated power added efficiency using a 300
transistor covering a frequency range of DC output power at greater than 50 percent microsecond, 10 percent duty cycle pulsed
through 6 GHz. drain efficiency over the entire band. signal.
This transistor is ideal for driver and medium Cree has also introduced the CGH31240F, “The CGH40006P and CGH31240F are
power stages within broadband amplifier which is a high-power, class A/B S-Band important new products which reflect our
topologies. In addition, it can be used in GaN HEMT transistor. road map of GaN HEMT transistors and
low-noise amplifier applications where the MMICs that offer higher power, bandwidth
superior ruggedness of GaN HEMTs can It is an internally-matched 240W packaged and ruggedness than conventional
lessen the need for protection components, device for the 2.7 to 3.1 GHz band. It is technologies such as GaAs and Si,” said
typically required in GaAs MESFET low- designed for civil radar applications such as Tom Dekker, Cree director of sales and
noise amplifiers. weather and air traffic control, as well as for marketing for RF Products.
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www.compoundsemiconductor.net January/February 2010
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