compound semiconductor news digest
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RF Micro Devices ‘supports advanced functionality for aerospace and defence’ -
26 Jan, 2010
A new report by Fast Market Research has local area network and wireless Another development last year saw RF
praised RF Micro Devices for enabling infrastructure networks. Micro Devices announce it had passed 25
enhanced connectivity and worldwide million units in shipments of its RF71xx
mobility. RF Micro Devices - which designs During the financial year ended March family of 2G dual-band and quad-band
and manufactures high-performance 2009, the firm recorded revenues of $886.5 transmit modules.
compound semiconductors and radio million (£549 million), although this marked
frequency components - enables worldwide a 7.3 per cent fall over 2008. RF Micro Commenting on the news, Eric Creviston,
mobility, according to a new report. Devices previously revealed a net profit of president of RF Micro Device’s cellular
$5.7 million in 2008. products group, said “the product family
A new report by Fast Market Research continues to enjoy robust design activity
noted that RF Micro Devices also provides Its compound semiconductor and radio across handset manufacturers and global
enhanced connectivity and support frequency components are also widely used platform providers as we continue to
advanced functionality for the aerospace in the cable television and broadband develop specific product derivatives”.
and defence, cellular handsets, wireless markets.
Cree Announces Sample Availability of Two New
2.7 to 3.1 GHz band. It is designed for civil
radar applications such as weather and air
GaN HEMT Transistors - 12 Jan, 2010
traffic control, as well as for marine radar.
The CGH31240F, operating at 28V, offers
Cree, Inc. announces the sample release of GaAs MESFET low-noise amplifiers. over 10dB power gain while providing over
two new GaN HEMT transistors, expanding A demonstration amplifier using the new 240 Watts saturated power with greater
the power range and addressable transistor, at 28 volts operating voltage, than 50 percent power added efficiency
applications of the Cree product family. provided a 2 to 6 GHz instantaneous using a 300 microsecond, 10 percent duty
bandwidth achieving 12 dB average cycle pulsed signal.
The CGH40006P is a 6-Watt GaN HEMT small signal gain and 8 Watts typical
transistor covering a frequency range of DC saturated output power at greater than 50 “The CGH40006P and CGH31240F are
through 6 GHz. This transistor is ideal for percent drain efficiency over the entire important new products which reflect our
driver and medium power stages within band. road map of GaN HEMT transistors and
broadband amplifier topologies. In addition, MMICs that offer higher power, bandwidth
it can be used in low-noise amplifier Cree has also introduced the CGH31240F, and ruggedness than conventional
applications where the superior ruggedness which is a high-power, class A/B S-Band technologies such as GaAs and Si,” said
of GaN HEMTs can lessen the need for GaN HEMT transistor. It is an internally- Tom Dekker, Cree director of sales and
protection components, typically required in matched 240W packaged device for the marketing for RF Products..
austriamicrosystems LED driver ICs power LG Electronics new LED backlit TVs
shown at CES - 08 Jan, 2010
austriamicrosystems , a leading global designer and manufacturer of enabled LG Electronics to develop a very slim design with superb
high performance analog ICs for communications, industrial, medical picture quality while at the same time achieving extremely low energy
and automotive applications, today announced that LG Electronics, a consumption. We will continuously innovate to further drive product
leading provider of LCD TVs, has selected the AS3693A and designs in this fast growing market,” Markus Luidolt, marketing
AS3693B LED driver ICs for TV models being introduced at CES manager lighting at austriamicrosystems, stated.
2010 in Las Vegas.
A full range of LG Electronics TVs with the latest LED backlighting
The innovative AS3693 family helps facilitate extremely flat LCD TVs technology is being presented at CES. They offer picture quality
with the highest possible contrast ratios resulting in outstanding without compromise in energy saving, ultra-slim designs. The
picture quality. A patented power saving technology actively AS3693 is optimized to support local dimming backlight for
regulates the LED power supply and minimizes power dissipation in outstanding contrast ratios, and is already adopted in LG Electronics
the system. This makes very thin flat panel designs possible that are bestselling ultra flat borderless SL9000 and SL9500 TVs.
also very energy efficient. In addition, the entire portfolio has the
industry’s best current accuracy — to within +/- 0.5 % — resulting in austriamicrosystems will demonstrate the AS3693 product line
excellent brightness uniformity. “We are very proud of this intense including the latest portfolio additions available in QFN, ePQFP and
cooperation and are fully committed to delivering best-in-class LQFP packages in an off-exhibition suite at the Consumer
performance, cost-effective solutions and the most energy efficient Electronics Show 2010 in Las Vegas.
technology to LG Electronics. austriamicrosystems’ AS3693
January/February 2010
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