news digest compound semiconductor
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UCL MBE facility enhances university’s international reputation - Jan 28, 2010
The MBE facility at UCL has been officially competitiveness in semiconductor and including radar systems, solar cells, mobile
opened, allowing it to start creating new optoelectronic science. telephones and fibre-optics.
and improved devices across a number of
applications. Special source arrangements have also “The supplying of high-quality low-
been put in place to enable the production dimensional semiconductor materials is one
A new Molecular Beam Epitaxy (MBE) of complex III-V epitaxial structures which of the key limiting factors of semiconductor
facility at the University College London use a combination of phosphorus, arsenic materials and devices in UCL,” the
(UCL) has been opened by HRH The and antimony crackers with indium, gallium university noted.
Princess Royal so it can officially start and aluminium solid sources.
creating new and improved devices. It has also been announced that Veeco
MBE allows compound semiconductor Instruments has been awarded funding from
The new MBE system will further enhance materials to be made with great precision. the US Department of Energy to advance its
UCL’s reputation in photonics and Materials are layered on top of the other to metal organic chemical vapour deposition
nanotechnology, as well as its global form lasers and transistors for applications technology.
Finisar and Ixia Demonstrate 100 Gb/s Ethernet Interoperability - Jan 5, 2010
Finisar Corporation and Ixia today laboratories together with system vendors customers.” Ixia’s K2 higher speed Ethernet
announced they have successfully soon.” (HSE) load module is the industry’s first and
demonstrated interoperability between Ixia’s only 100GE IP test solution which is
K2 100 Gb/s and 40 Gb/s IP test interfaces Finisar’s 100GE LR4 CFP optical capable of transmitting, receiving and
with Finisar’s 100G Ethernet (100GE) CFP transceivers are compliant with the CFP analyzing full line-rate 100 Gb/s Ethernet
optical transceiver modules. Multi-source Agreement (MSA) and support traffic. It is the latest load module in Ixia’s
the 100GBASE-LR4 (4x25G) optical test platform, which includes test chassis
The test setup included a Finisar 100GE interface standardized in the IEEE and load modules designed for different
LR4 CFP optical transceiver module P802.3ba Draft document. They are part of interface types and speeds.
operating in the Ixia K2 100 Gb/s a family of Finisar CFP transceiver modules
Ethernet/IP test module. Error-free operation that also includes 40G Ethernet and All load modules, including both the
was demonstrated by transmitting IP multimode fiber versions. Finisar’s entire 40GE and 100GE models, test the full
packets to a second Finisar 100GE LR4 portfolio of transceiver modules utilize range of IP networking devices — from layer
CFP optical module over 25 kilometers of internally developed integrated circuits and 2 through 7.
single-mode fiber, vastly exceeding the 10- internally packaged optics.
kilometer distance being standardized for “Ixia’s use of the Finisar CFP demonstrates
this application by the IEEE. “Demonstrating interoperability of 100GE the feasibility of pluggable optics for both
CFP modules with leading 100GE test 40/100 GE,” said Errol Ginsberg, chief
“Initial performance testing of the Finisar systems is a very positive milestone for the innovation officer of Ixia. “We believe this
100GE LR4 CFP transceiver in their facility entire industry,” said Christian Urricariet, extremely successful demonstration
was very promising,” stated Glenn director of product marketing for high-speed conducted by Ixia and Finisar for carriers,
Wellbrock, Director of Optical Transport, optics at Finisar. “We are convinced that the such as Verizon, shows that 100 GE
Network Architecture and Design for LR4 versions of the pluggable CFP technology is quickly moving forward and
Verizon, who witnessed the event. “I look transceivers will enable successful 100G will soon approach the deployment phase.”
forward to testing the module in our Ethernet deployments by our key
Cree Announces New GaN HEMT MMIC Power Amplifier - Jan 12, 2010
Cree, Inc. announces the release of a new smallest high-power amplifiers covering this GaN MMIC foundry process and the
GaN HEMT MMIC power amplifier, the bandwidth available in the marketplace. The convenient package format found in our
CMPA0060025F, which offers 25 Watts MMIC can operate with supply voltages up other GaN MMIC products,” said Tom
output power over an instantaneous to 50 volts and typically has 12 dB of power Dekker, Cree director of sales and
bandwidth of 20 MHz to 6 GHz. This gain. marketing for RF Products. “We have
product is ideal for military and ISM received excellent customer feedback for
(industrial, scientific and medical) “The CMPA0060025F is a direct result of our existing GaN MMIC products and are
applications that require high power and customer requests for a small, high-power, excited to be expanding this product line
broadband amplification up to 6GHz. The high-efficiency amplifier with performance while continuing to offer custom MMIC
CMPA0060025F is packaged within a 0.25 through 6 GHz. It is designed to satisfy foundry services.”
square inch footprint, making it one of the these requirements using Cree’s proven
2 www.compoundsemiconductor.net January/February 2010
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