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Panasonic Develops a Gallium Nitride (GaN) Inverter Gallium Nitride Devices
IC for Motor Drive with High Efficiency -14 Jan,2010 Enable Higher Output
(Osaka, Japan - Panasonic today which fully relax the strain in the film caused
Power - 15 Jan, 2010
announced the development of a Gallium by the lattice and thermal mismatches
Nitride (GaN) -based monolithic inverter between GaN and Si. Nitronex, a leader in the design and
integrated circuit (IC) for motor drive. The manufacture of gallium nitride (GaN) based
integrated six GaN-based transistors can be Successful motor drive is confirmed using RF solutions for high performance
independently driven in a single chip, which the new GaN-based monolithic inverter IC. applications in the defense, communications,
enables successful motor drive with high The conversion loss is effectively reduced and industrial & scientific markets, announced
efficiency. The new GaN inverter IC is by 42% from that by conventional Si-based today that they have shipped over 200,000
applicable to motor drive in a variety of IGBT (Insulated Gate Bipolar Transistor) at custom devices to a major US-based cable
consumer electronics. the output power of 20W. television (CATV) amplifier supplier.
Panasonic’s proprietary Gate Injection On-state loss is reduced by the GIT free “Looking forward, we will build on our
Transistors (GITs) are integrated into a from the off-set voltage in the forward bias success in 2009 via the development of new
single chip taking advantages of its lateral which is seen in conventional IGBT. products and the expansion of our
device configuration. The GIT serves organization in 2010 to enable additional
normally-off operation with low on-state The integration reduces the parasitic applications in the CATV market that utilize
resistance and high breakdown voltage. inductance so that the switching loss is the benefits of our GaN technology.” said
Independent operation of each GIT is effectively reduced. Charlie Shalvoy, President and CEO for
possible by planar isolation using iron (Fe) Nitronex.
ion implantation keeping high breakdown The inverter IC is the world first
voltage around 900V between each demonstration of a single chip GaN-based Nitronex’s custom device, inside the CATV
transistor which is stable even after high inverter IC for motor drive. amplifier, is better able to withstand voltage
temperature fabrication process over 800 C. surges in CATV networks than competing
Applications for 141 domestic and 90 GaAs devices due to the inherent robustness
It is also noted that the IC is fabricated on overseas patents have been filed. These of Nitronex GaN technology. This custom
cost effective Si substrate with large research and development results have device also enables higher output power than
diameter. The epitaxial structure is grown by been presented at International Electron competing GaAs-based technologies which
metal organic chemical vapor deposition Devices Meeting 2009, held in Baltimore, reduces network cost by requiring fewer
(MOCVD) with novel buffer structures U.S. from December 7 to 9, 2009. amplifiers.
Microsemi Local Dimming Technology for LED
Backlights 13 Jan, 2010
LED Driver Chipsets Enable Flexibility and Tom Kapucija, Director of Marketing, to achieve significant display-quality
Performance in Demanding High Image observed, “As anticipated, tremendous breakthroughs including LED local dimming
Quality LCD TV Applications. industry effort geared towards LED TV solutions. In addition to the LED-based TV
backlighting resulted in many new TV introductions at CES, Microsemi continues
Microsemi Corporation (Nasdaq:MSCC), a product introductions. The market is now to innovate drivers for CCFL backlit TVs
leading manufacturer of high performance realizing the energy efficiency and image with unique developments such as the JIN
analog/mixed signal integrated circuits and performance benefits possible with local Balancer and the recently announced
high reliability semiconductors, witnessed dimming backlight technology.” PureBLACK(TM) CCFL mega contrast
industry confirmation for its local dimming digital burst dimming technology.
technology designed for LED backlights in “3D TVs with LED backlighting were the
LCD TVs, many of which were introduced at favorites of the show with many attendees “In addition to the new LED programs, it is
the 2010 Consumer Electronics Show in spending considerable time viewing significant that we have also seen continued
Las Vegas. comparison video demonstrations,” Kapucija CCFL TV development as evidenced by
added. “The industry is gearing up to over 25 new CCFL IC program
“Microsemi has seen substantial market provide 3D content as well as delivery engagements last quarter between
acceptance and continues to pioneer local methods such as 3D Blu-Ray players, disks, Microsemi and key TV manufacturers,”
dimming LED display backlighting,” stated and off-air receivers.” Pickle said. “In particular, we see continued
Paul Pickle, Executive Vice President and strength in the Chinese market with
General Manager with Microsemi’s Analog A leader in large-screen LCD TV innovations substantial new program success from the
Mixed Signal Group. for more than a decade, Microsemi has top five leading companies such as
worked with leading LCD TV manufacturers Changhong, Skyworth and TCL.”
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www.compoundsemiconductor.net January/February 2010
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