Supplement: Power
Nexperia launches 1200 V SiC MOSFETs in top-side cooled
X.PAK New
X.PAK packaging combines high thermal performance, compact size, and easy assembly for high-power applications
N
experia introduces a range of highly efficient and robust industrial grade 1200 V silicon carbide (SiC) MOSFETs with impressive temperature stability
in surface-mount (SMD) top-side cooled packaging technology called
X.PAK. This package, with its compact form factor of 14 mm x 18.5 mm, combines the assembly benefits of SMD with the cooling efficiency of through-hole technology, ensuring optimal heat dissipation. This release addresses the growing demand from a broad range of high power (industrial) applications for discrete SiC MOSFETs that harness the advantages of top-side cooling to deliver impressive thermal performance. These switches are suitable for industrial applications such as battery energy storage systems (BESS), photovoltaic inverters, motor drives, and uninterruptible Power Supplies (UPS). Additionally, they are well-suited for electric vehicle charging infrastructure, including charge piles. The
X.PAK package further enhances
the thermal performance of Nexperia’s SiC MOSFETs by reducing the negative impacts of heat dissipation via the PCB. Furthermore, Nexperia’s
X.PAK package enables low inductance for surface mount components and supports automated board assembly. The new
X.PAK packaged devices deliver class-leading figures-of-merit (FoM) known from Nexperia SiC MOSFETs, with RDS(on)
being
a particularly critical parameter due to its impact on conduction power losses. However, many manufacturers concentrate on the nominal value of this parameter and neglect the fact that it can increase by more than 100 per cent as device operating temperatures rise, resulting in significant conduction losses. Nexperia SiC MOSFETs, on the other hand, offer impressive temperature stability, with the nominal value of RDS(on)
increasing by only 38
per cent over an operating temperature range from 25 °C to 175 °C.
“The introduction of our SiC MOSFETs in
X.PAK packaging marks a significant advancement in thermal management and
power density for high-power applications,” said Katrin Feurle, senior director and head of SiC discretes & modules at Nexperia. “This new top-side cooled product option builds on our successful launches of discrete SiC MOSFETs in TO-247 and SMD D2PAK-7 packages. It underscores Nexperia’s commitment to providing our customers with the most advanced and flexible portfolio to meet their evolving design needs.”
with RDS(on)
The initial portfolio includes products values of 30, 40, 60 mΩ
(NSF030120T2A0, NSF040120T2A1, NSF060120T2A0), a part with 17 mΩ will be released in April 2025. An automotive qualified SiC MOSFETs portfolio in
X.PAK packaging will follow later in 2025, as well as further RDS(on)
classes like 80 mΩ.
www.nexperia.com/sic-mosfets
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https://www.watlow.com/Contact-Us Components in Electronics March 2025 33
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