More than your GaN material supplier
EpiGaN provides GaN epitaxial material solutions for electronics applications
• On Si and SiC substrates • Wafers from 3” up to 6” diameter, 200 mm in development • InAlGaN heterostructures • With unique in-situ SiN passivation technology • Customised epi design • Proven results in power switching (600V and above) • Proven results in RF power (up to 100GHz)
Contact details: EpiGaN nv
Kempische steenweg 293 3500 Hasselt - Belgium
www.epigan.com info@epigan.com tel: +32 11 56 66 20 fax: +32 11 56 66 29
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