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12-01 :: January 2012

nanotimes News in Brief

According to a team from North Dakota State University Centre for Nanoscale Science and Engineering, the laser enabled advanced packaging (LEAP) process enables chips less than 50μm thick to be rapidly placed and fixed at specific locations and orientations with high precision.

Moreover, North Dakota State University, Fargo, researchers have developed a packaging technology using Thermo-Mechanical Selective Laser Assisted Die Transfer (tmSLADT) to reduce the size and cost of microelectronics packages.

http://www.ndsu.edu

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nide semiconductor sandwiched between a pair of ultrathin barrier layers of aluminum-arsenide semi- conductor. This dual-barrier structure, plus a quan- tum-mechanical effect, provides that electromagne- tic waves generated within a terahertz oscillator will be repeatedly amplified, rather than attenuated, which means that the oscillator will emit continuo- us-wave electromagnetic radiation at terahertz fre- quencies. The group of TU-Darmstadt researchers collaborated with German ACST GmbH, a local fabricator of microelectronic circuit components, in producing their diode.

The team of physicists and engineers led by Michael Feiginov at the TU-Darmstadt’s Institute for Microwave Technology and Photonics has develo- ped a resonance tunnel diode (RTD) for generating terahertz electromagnetic radiation that takes up less than a square millimeter and may be produced using more or less conventional semiconductor- device fabrication technologies. Furthermore, their innovative transmitter has set a new frequency record, 1.111 THz, for microelectronic devices at room temperature.

A minuscule transmitter, like that developed by his group, should be capable of generating much higher frequencies extending up to 3 THz.

The heart of their RTD is a dual-barrier structure, within which a quantum well (QW) is embedded. A QW is a very thin layer of indium-gallium arse-

Michael Feiginov, Cezary Sydlo, Oleg Cojocari, and Pe- ter Meissner: Resonant-tunnelling-diode oscillators ope- rating at frequencies above 1.1THz, In: Applied Physics Letters, Volume 99(2011), Issue 23, December 05, 2011, Article 233506 [3 pages], DOI:10.1063/1.3667191: http://dx.doi.org/10.1063/1.3667191

Engineering researchers at Rensselaer Polytechnic Institute (U.S.) have developed a new method for creating advanced nanomaterials that could lead to highly efficient refrigerators and cooling systems requiring no refrigerants and no moving parts.

Driving this research breakthrough is the idea of intentionally contaminating, or doping, nanostruc- tured thermoelectric materials with barely-there amounts of sulfur. The doped materials are ob- tained by cooking the material and the dopant together for few minutes in a store-bought $40 microwave oven. The resulting powder is formed into pea-sized pellets by applying heat and pressure

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