12-01 :: January 2012
nanotimes News in Brief
According to a team from North Dakota State University Centre for Nanoscale Science and Engineering, the laser enabled advanced packaging (LEAP) process enables chips less than 50μm thick to be rapidly placed and fixed at specific locations and orientations with high precision.
Moreover, North Dakota State University, Fargo, researchers have developed a packaging technology using Thermo-Mechanical Selective Laser Assisted Die Transfer (tmSLADT) to reduce the size and cost of microelectronics packages.
http://www.ndsu.edu
69
nide semiconductor sandwiched between a pair of ultrathin barrier layers of aluminum-arsenide semi- conductor. This dual-barrier structure, plus a quan- tum-mechanical effect, provides that electromagne- tic waves generated within a terahertz oscillator will be repeatedly amplified, rather than attenuated, which means that the oscillator will emit continuo- us-wave electromagnetic radiation at terahertz fre- quencies. The group of TU-Darmstadt researchers collaborated with German ACST GmbH, a local fabricator of microelectronic circuit components, in producing their diode.
The team of physicists and engineers led by Michael Feiginov at the TU-Darmstadt’s Institute for Microwave Technology and Photonics has develo- ped a resonance tunnel diode (RTD) for generating terahertz electromagnetic radiation that takes up less than a square millimeter and may be produced using more or less conventional semiconductor- device fabrication technologies. Furthermore, their innovative transmitter has set a new frequency record, 1.111 THz, for microelectronic devices at room temperature.
A minuscule transmitter, like that developed by his group, should be capable of generating much higher frequencies extending up to 3 THz.
The heart of their RTD is a dual-barrier structure, within which a quantum well (QW) is embedded. A QW is a very thin layer of indium-gallium arse-
Michael Feiginov, Cezary Sydlo, Oleg Cojocari, and Pe- ter Meissner: Resonant-tunnelling-diode oscillators ope- rating at frequencies above 1.1THz, In: Applied Physics Letters, Volume 99(2011), Issue 23, December 05, 2011, Article 233506 [3 pages], DOI:10.1063/1.3667191:
http://dx.doi.org/10.1063/1.3667191
Engineering researchers at Rensselaer Polytechnic Institute (U.S.) have developed a new method for creating advanced nanomaterials that could lead to highly efficient refrigerators and cooling systems requiring no refrigerants and no moving parts.
Driving this research breakthrough is the idea of intentionally contaminating, or doping, nanostruc- tured thermoelectric materials with barely-there amounts of sulfur. The doped materials are ob- tained by cooking the material and the dopant together for few minutes in a store-bought $40 microwave oven. The resulting powder is formed into pea-sized pellets by applying heat and pressure
Page 1 |
Page 2 |
Page 3 |
Page 4 |
Page 5 |
Page 6 |
Page 7 |
Page 8 |
Page 9 |
Page 10 |
Page 11 |
Page 12 |
Page 13 |
Page 14 |
Page 15 |
Page 16 |
Page 17 |
Page 18 |
Page 19 |
Page 20 |
Page 21 |
Page 22 |
Page 23 |
Page 24 |
Page 25 |
Page 26 |
Page 27 |
Page 28 |
Page 29 |
Page 30 |
Page 31 |
Page 32 |
Page 33 |
Page 34 |
Page 35 |
Page 36 |
Page 37 |
Page 38 |
Page 39 |
Page 40 |
Page 41 |
Page 42 |
Page 43 |
Page 44 |
Page 45 |
Page 46 |
Page 47 |
Page 48 |
Page 49 |
Page 50 |
Page 51 |
Page 52 |
Page 53 |
Page 54 |
Page 55 |
Page 56 |
Page 57 |
Page 58 |
Page 59 |
Page 60 |
Page 61 |
Page 62 |
Page 63 |
Page 64 |
Page 65 |
Page 66 |
Page 67 |
Page 68 |
Page 69 |
Page 70 |
Page 71 |
Page 72 |
Page 73 |
Page 74 |
Page 75 |
Page 76 |
Page 77 |
Page 78 |
Page 79 |
Page 80 |
Page 81 |
Page 82 |
Page 83 |
Page 84 |
Page 85 |
Page 86 |
Page 87 |
Page 88 |
Page 89 |
Page 90 |
Page 91 |
Page 92 |
Page 93 |
Page 94 |
Page 95 |
Page 96 |
Page 97