News Review International ties strengthened
SPIE and the Japan Society of Applied Physics (JSAP) have renewed an agreement to collaborate in technical conferences, publications, and other information exchange, with the signing of a memorandum of understanding by the two societies’ presidents this week in Osaka.
“SPIE is honored to continue our
close relationships and fruitful collaboration with the Japan Society of Applied Physics and its members through this agreement,” said SPIE President Katarina Svanberg (Lund University Hospital). “The memorandum we have signed is a continuation of a long-standing partnership between our two societies that has helped advance optics and photonics in important ways.” Yasuhiro Shiraki, President of the
JSAP and professor at Tokyo City University, and Svanberg met for the signing during the Optics and Photonics Japan 2011 conference sponsored by the Optical Society of Japan (OSJ) at Osaka University. OSJ is a member society of
JSAP.The MOU recognizes the strong interest in mutual cooperation between JSAP and SPIE to serve members of the international optical science and engineering community.
Among those present at the
signing were Optical Society of Japan President and past SPIE Board member Mitsuo Takeda, SPIE Board member Toyohiko Yatagai, and other leadership from the OSJ. During a special session at the OSJ conference, Svanberg, gave a talk on “Diagnostics and treatment of tumors using laser techniques” and
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EUV lithography ties affirmed TOKYO ELECTRON LIMITED
(TEL) and ASML Holding NV (ASML) announced an agreement to accelerate joint development activities of EUV (Extreme Ultraviolet) and ArF Immersion using state-of-the-art lithography clusters. This agreement on joint development acceleration was made in order to meet increasing customers’ demand for leading edge systems capable of next generation chip production,
namely EUV technology which is the key lithography solution for 22nm and beyond, and extended ArF immersion which remains a mainstream technology for critical layers of advanced chip production. Through this dual technology leadership strategy, TEL and ASML are aiming to strengthen our offerings to best support our customers for sub 20nm nodes development. As part of this agreement, TEL and
ASML will provide equipment at their respective facilities in Kumamoto, Japan and Veldhoven, the Netherlands to accelerate development, investigation and customer demonstration activities of the most advanced lithography technologies.
Extensively researched all over the world, EUV is the key lithography solution for 22nm and beyond nodes. Over the past years, TEL and ASML have jointly researched EUV fundamentals and facilitated early EUV customer demonstrations. In addition to these existing efforts, TEL will introduce the company’s most advanced EUV coater/developer at ASML’s R&D base in Veldhoven and both companies will continue to work together to establish EUV process development for sub 22nm nodes by the end of 2012. Process development on both ASML’s leading edge volume production system TWINSCAN NXE:3300 and TEL’s newest coater/developer will be focused on key
provided an overview of SPIE. Svanberg and other featured speakers were honored at an evening reception. Svanberg’s visit in Japan also included a talk at a meeting of the SPIE Student Chapter at Osaka University and participation in the Handai Photonics Day 2011 hosted by SPIE Fellow Satoshi Kawata at the Photonics Center at the university.
factors for EUV process development, such as reducing LWR (line width roughness), mitigating pattern collapse, controlling defects and improving CD uniformity, aiming to support smooth transition to volume production with EUV technology. Currently, ArF immersion is the most common lithography technique for high volume advanced patterning. To meet industry needs to further optimize immersion lithography technology beyond existing capabilities, TEL and ASML will soon begin developing and validating advanced processes on ASML’s 1.35 NA immersion scanners and TEL’s coater/developers at TEL’s Kumamoto Koshi facilities in addition to their current joint immersion process development work at ASML in Veldhoven. A key focus of this joint development work is to further increase productivity beyond 4,000 wafers per day, which was recently demonstrated at a customer’s manufacturing facility. With the installation of the immersion ArF scanner completed at TEL’s site, both companies intend to accelerate their joint development activity.
www.euroasiasemiconductor.com Issue V 2011
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