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nanotimes News in Brief


11-02/03 :: February / March 2011


Dual-layer Carbon Film // Formation of a Dual-layer Carbon Film on Silicon Carbide in a CCl4


-Containing Atmosphere R


esearchers of the R&D Center of Lubricating and Protecting Materials of the Lanzhou Insti- tute of Chemical Physics (LICP), CAS, China, have


successfully prepared a carbon film on SiC using CCl4 as a reactant.


A dual-layer carbon film on SiC is synthesized using a combination of carbide derived carbon (CDC) process and chemical vapor deposition (CVD) in a CCl4


- containing atmosphere. The film is composed


of a CDC sub-layer formed by chlorination of the SiC and a CVD top-layer by pyrolyzing CCl4


. The tem-


perature plays an important role in the film forma- tion. Since the chlorination rate is greatly superior to CVD process, the CDC layer is much thicker in comparison with CVD layer. The thickness of CDC layer can be reduced by H2


them perform well in areas such as hydrogen storage, catalysts, battery or supercapacitor electrodes.


Jian Sui and Jinjun Lu: The formation of a dual-layer carbon film on silicon carbide using a combination of carbide-derived carbon process and chemical vapor de- position in a CCl4


-containing atmosphere, In: Carbon,


Volume 49(2011), Issue 2, February 2011, Pages 732-736, DOI:10.1016/j.carbon.2010.10.026: http://dx.doi.org/ 10.1016/j.carbon.2010.10.026


introduction and evapo- rating the CCl4 at lower temperature. The formation


mechanism of the dual-layer film is proposed as two simultaneous and competitive processes, namely, the chlorination of SiC and the growth of CVD layer. The prepared dual-layer carbon film is expected to be a better interfacial coating than CDC in metal- matrix composite, and a good lubricating coating in mechanical seal.


In recent years, CDC materials have attracted consi- derable interest due to their high specific surface area and controlled pore size distribution, which make


A dual-layer carbon film is prepared using a combination of carbide-derived carbon (CDC) process and chemical vapor deposition (CVD) in a CCl4


. © Lu Jinjun et al.


-containing atmosphere.


The CDC sub-layer is formed by chlorination of SiC, while the CVD layer is formed by pyrolyzing the CCl4


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