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Semiconductor researchers develop "fin-like"
transistor from indium gallium arsenide
Semiconductor researchers at Purdue two years, without the circuit increasing in
University are in the process of developing size.
a new type of transistor which could enable
engineers to create more compact and However, it has become increasingly difficult
faster circuits. to continue to miniaturise devices which are
made out of conventional silicon, leading to
The researchers have developed the new suggestions that indium-gallium-arsenide
semiconductor which uses a "fin-like" could address this.
structure - rather than the conventional flat
design - made from indium-gallium-arsenide, "As gate lengths are made smaller than 22
by using atomic layer deposition nanometres, the silicon dioxide insulator
technology. used in transistors fails to perform properly
and is said to 'leak' electrical charge," the
According to the higher education university noted.
establishment, the new semiconductors
could help the electronics industry meet the The Nano-Science Centre recently reported
challenges set by Moore's law, which states that combining the semiconductors gallium-
that miniaturisation of components will indium-arsenide and indium arsenide in the
allow the number of transistors on an same nanowire could enable more energy to
integrated circuit to double roughly every be captured.
November / December 2009 www.compoundsemiconductor.net 9
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