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Obducat takes part in EU project
SMASH is an EU funded project within the nanostructured compound semiconductors
Seventh Framework Programme, FP 7. The to realize the key market factors of high
project is coordinated by OSRAM Opto efficiency and low cost. These will be
Semiconductors GmbH and brings achieved by epitaxial growth of LED
together complementary expertise from structures on ultra-low defect
across Europe. 14 partners will participate nanostructured templates and by the
in the project. development of LEDs based on nanorod
emitters. These approaches will have large
"Our main focus within the SMASH project impact on manufacturing costs because
will be on stamp manufacturing and they enable growth on large area, low cost
replication of nanostructures based on our substrates such as Silicon.
proprietary IPS-STU nanoimprint
lithography technology for high volume "Realizing these technologies will lead to a
manufacturing", says Patrik Lundström, new generation of highly efficient and
OBDUCAT has been invited to participate CEO, Obducat AB. affordable LEDs, which enables the
in the EU funded SMASH project. The entrance to the general lighting market.
project's purpose is to establish new Key success factors for the broad That will keep Europe at the forefront of the
materials and process technologies to be penetration of LEDs into the general energy-saving solid state lighting business
used in production of low-cost, power- lighting market are: high power efficiency and strengthen its position in the
efficient, white LED-light sources for the and low cost. The concept of SMASH is to manufacturing supply chain and luminaire
general lighting market. establish disruptive approaches that exploit business", says Patrik Lundström.
UV laser for sapphire scribing in
GaN LEDs
Coherent has announced a UV laser that enables a high throughput processing with
could reduce the cost of micromachining minimal heat affected zone (HAZ).
tasks in areas like scribing sapphire
substrates used in the fabrication of GaN The new UV laser is targeted as a cost
LEDs. effective, compact, OEM product that
offers many of the features found on more
The AVIA 355-5 is a Q-switched Nd:YVO4 powerful AVIA models. The laser also has
laser that delivers 5W of 355 nm output at an automated harmonic crystal shifter to
50 kHz, and is suitable for operation at maintain constant output power for greater laser head measuring only 491 mm x 216
repetition rates of up to 150 kHz. Its than 20,000 hours and help reduce the mm x 141 mm. The laser also delivers
combination of high repetition rate and short cost of ownership. The AVIA 355-5 has enhanced reliability and ease of
pulse length (less than 20 nsec at 5W) been designed for easy integration with a maintenance.
AIXTRON receives order for MOCVD GaAs for LED
AIXTRON AG has announced that Mr. Deng Dian Ming, CEO of Changelight forward to further good cooperation.
Changelight Co., Ltd has ordered an Co. Ltd., comments: "The AIX 2600G3
AIXTRON Planetary Reactor system for system is well known for its capabilities in Changelight is fully committed to the
the production of Gallium Arsenide (GaAs) respect to the mass production of GaAs development and large-scale production of
LED. The Changelight order is for an AIX LED. We are convinced that the system III-V-based optoelectronic devices. We
2600G3 system in the 49x2-inch wafer lives up to its reputation as regards have acquired the most advanced
configuration. The tool was delivered in the throughput, uniformity and dependable equipment for this application which will
third quarter 2009 to the company’s state- production efficiency. We have been be used by our highly skilled technical
of-the-art new facilities in Xiamen (Xiang working closely with the local AIXTRON team strongly being supported now by
An) Torch Industry Park of Fujian Province, support team before and they have always new staff members from the USA and
China. been very responsive, thus we are looking Taiwan”.
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www.compoundsemiconductor.net November / December 2009
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