CONNECTING THE COMPOUND SEMICONDUCTOR COMMUNITY contents
Volume 15 Number 8
industry & technology
16
Tube lasers ready to light up
Differences in polarity, lattice constant and thermal
expansion hamper the unification of compound
semiconductor light emitting structures and silicon
ICs. A team from McGill University have turned to a
novel micro-tube laser architecture that suspends the
device just above the wafer surface.
22
Combatting LED droop
Three themes dominated the latest nitride meeting:
the cause of LED droop; the best approach to
plugging the green gap; and the development of
higher-quality, lower-cost native substrates.
26
Pushing transistor and sensor limits
The European Commission is funding a multi-national
project that aims to boost the performance of
nitride-based transistors, pressure monitors and
chemical sensors. Success could lead to creation
of AlInN/GaN-based devices.
31
Heating a wafer
It is something that should be a simple task but
37
it is amazing how intricate the process can be.
34
Optical coherence tomography
Superluminescent diodes are no longer a poor
relation of photonic devices
37
LED manufacturing helps company
One company discusses how the nadir of the first
half of the year being balanced by an increase in
LED production orders.
41
Novel design pushes mid IR laser power
US researchers claim to have broken the record for
the single facet output power from a quantum
16 26
cascade laser (QCL).
news
07
Has the industry reduced costs?
A lift for fibre lasers 12
SMASH project grows
Sapphire scribing for GaN
Nanoscale support from DNA MOCVD GaAs
08
Bioelectric cross talk
Increasing IC density 14
Solar panels for space
Thin film share of solar panel
07 08
GaN contract win market tipped to grow
10
Solid state benefits
LED growth
Quantum dot on the rise 15
Accurate GaN temperature
Green GaN modules
Etching III-V
12 14
November / December 2009 www.compoundsemiconductor.net 5
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