Sensor Technology
Why advances in MEMS technology are key for the future of sensors
By Dr. Josep Montanyà i Silvestre, CEO at Nanusens S
ensors are all around us. A crucial component of smartphones, smart wearables and a wide range of other smart devices, sensors have tiny mechanical parts that move due to a specific stimulus. This movement is detected to form an electrical signal. Known as MEMS (Micro-Electro-Mechanical Systems) technology it is critical for the creation of high functioning sensors. Despite the fact there are recognized challenges with traditional MEMS technology, MEMS advances are under way that will address these and pave the way for the next generation of sensors.
Traditional MEMS limitations Traditional MEMS production relies on specialized processes and requires a custom line for each sensor type. Therefore, it is difficult to increase production as this would mean designing and building more lines, which is very expensive and time-consuming. Furthermore, this MEMS manufacturing can have lower yields than standard semiconductor processes, as little variations in fabrication can lead to performance differences. The recent surge in demand for modern smart devices with more complex sensors means these MEMS production limitations are becoming increasingly concerning. Going forward, MEMS technology must also deliver sensors that are smaller and more power-efficient, as well as enabling multiple sensing elements to be embedded in a single package to help enhance functionality.
Advances with MEMS
There is one company, Nanusens, that has been focused for several years on finding a solution to address the limitations with traditional MEMS technology. Rather than building a MEMS structure on top of a sliver of silicon using a specialized process in a specialized facility, Nanusens’ approach can create MEMS in the metal layers of a CMOS chip using standard processes at a normal CMOS fab. As a result, there are no production limitations and the costs are vastly reduced. As the new process takes place in the CMOS
46 October 2025
variations in the region of attofarads from one die that is connected via wire bonds to the MEMS die. Wire bonding or placing the traditional MEMS structure on top of a CMOS wafer leads to a parasitic capacitance of around a picofarad. The MEMS-in- CMOS method reduces this to around ten femtofarads or less, which is a considerable noise to signal ratio improvement. Nanusens has also developed a fully digital circuit design to measure the capacitance of its nanosensors. This means that both the sensor structure and its detection circuitry can be made at the same time with a chip using standard CMOS processes on whatever process node is required, further reducing the size and power consumption requirements.
The future of sensors
chip the structures are not microscopic in size, but nanoscopic. Traditional MEMS structures have feature sizes of one micron or larger while the Nanusens NEMS (Nano Electro Mechanical Systems) structures have features of 0.3 microns or less – a 100x area reduction. This cuts the power consumption of each sensor and means that several different
Components in Electronics
types of sensors can be built at the same time within the chip, radically reducing the size of a multi-sensor solution, creating more space for additional features and batteries. Another benefit of these NEMS is enhanced performance due to very small parasitic capacitances. This is because, with traditional MEMS, it is detecting very tiny capacitance
With the next generation of smartphones and smart wearables coming quickly down the line, the need for more complex sensors has never been so high. Advances in MEMS technology are undoubtedly key for the future of these sensors and fortunately there are developments in progress.
https://www.nanusens.com/
www.cieonline.co.uk
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