Test & measurement
AccelerAte Your test cApAbilitY And sYstem productivitY with new mems switches
By Richard Houlihan, product marketing manager, Naveen Dhull, product applications engineer, and Padraig Fitzgerald, principal IC design engineer, all at Analog Devices
Advanced digital processor ICs require separate DC parametric and high speed digital automatic test equipment (ATE) passes for quality assurance. This creates significant cost and logistical challenges. This article explains how the ADGM1001 SPDT MEMS switch facilitates a one pass single insertion test for both DC parametric and high speed digital tests, reducing test cost and simplifying logistics for digital/RF system on chip (SoC) testing.
34 T
he semiconductor market is evolving with higher speed and higher density interchip communications for advanced processors such as 5G modem ICs, graphics ICs, and central
processing ICs. Assuring quality amidst this increasing complexity and demand for increased throughput is the ultimate challenge for today’s ATE designers. One critical aspect is the increasing number of transmitter (Tx)/receiver (Rx) channels, which require both high speed digital and DC parametric testing. These challenges are driving complexity in semiconductor tests and not addressing them leads to increased test time, increased load board complexity, and reduction in test throughput. In turn, this will drive up operational expenses (OPEX) and reduce productivity in a modern ATE environment. To solve these ATE
challenges, a switch that is
operational at DC and high frequencies is needed. ADGM1001 can pass true 0Hz DC signals and up to 64Gbps high speed signals. This enables an efficient single test platform (one insertion) that can be configured to test both DC parameters and high speed digital communication standards, such as PCIe Gen 4/5/6, PAM4, and USB 4.
Feature sponsored by
Figure 2. ADGM1001 eye diagram at 32Gbps (RF1 to RFC with reference trace, pattern used PRBS 215-1
). January 2023 Instrumentation Monthly
Page 1 |
Page 2 |
Page 3 |
Page 4 |
Page 5 |
Page 6 |
Page 7 |
Page 8 |
Page 9 |
Page 10 |
Page 11 |
Page 12 |
Page 13 |
Page 14 |
Page 15 |
Page 16 |
Page 17 |
Page 18 |
Page 19 |
Page 20 |
Page 21 |
Page 22 |
Page 23 |
Page 24 |
Page 25 |
Page 26 |
Page 27 |
Page 28 |
Page 29 |
Page 30 |
Page 31 |
Page 32 |
Page 33 |
Page 34 |
Page 35 |
Page 36 |
Page 37 |
Page 38 |
Page 39 |
Page 40 |
Page 41 |
Page 42 |
Page 43 |
Page 44 |
Page 45 |
Page 46 |
Page 47 |
Page 48 |
Page 49 |
Page 50 |
Page 51 |
Page 52 |
Page 53 |
Page 54 |
Page 55 |
Page 56 |
Page 57 |
Page 58 |
Page 59 |
Page 60 |
Page 61 |
Page 62 |
Page 63 |
Page 64 |
Page 65 |
Page 66 |
Page 67 |
Page 68 |
Page 69 |
Page 70 |
Page 71 |
Page 72 |
Page 73 |
Page 74 |
Page 75 |
Page 76 |
Page 77 |
Page 78 |
Page 79 |
Page 80 |
Page 81 |
Page 82