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Journal Highlights


Techniques and Material Applications


Depth Resolution Dependence on Sample T ickness and Incident Energy in On-Axis Transmission Kikuchi Diff raction in Scanning Electron Microscopy (SEM) by E Brodu and E Bouzy, Microsc Microanal 23(6) (2017) 1096–1106.


Transmission Kikuchi diffraction (TKD) is a powerful emerging technique allowing nanoscale orientation mapping of electron-transparent samples in SEM. The spatial lateral resolution of this technique is below 10 nm, enabling the study of finer microstructures than by EBSD. The “on-axis” TKD configuration was then developed at LEM3 with the objective of reducing drastically the acquisition time. This study investigates the depth resolution of the “on-axis” configuration, defined as the thickness of the emitting layer at the bottom of samples. Thanks to a silicon sample specifically designed and produced, the depth resolution (or selectivity) of the Kikuchi diffraction is measured as a function of sample thickness and incident beam energy: it ranges on silicon from 30–65 nm in the range 10–30 keV with a close-to-linear dependence with energy and no dependence with sample thickness. This depth resolution, making only the bottom of samples visible by TKD, results from the absorption of the Kikuchi diffraction emitted by the top layers by the bottom layers. The mean absorption coefficient is then proposed to model this selectivity.


The depth resolution, or selectivity, of the Kikuchi diffraction by “on-axis” TKD in SEM was measured via the analysis of the diffraction patterns produced on line scans, which are crossing a silicon twin boundary.


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View the journal online at cambridge.org/mam Micrrosccopy Soccietty py y of Am merica 2018 March • www.microscopy-today.com 57


Published for the Microscopy Society of America Ed tor:


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