11-04 :: April/May 2011
nanotimes News in Brief
55
This photo shows a comparison of two 32 Gigabit (Gb) Intel Micron Flash Technologies (IMFT) 34nm die versus one 64Gb, or 8 Gigabyte (GB), die on 25nm and new 20nm processes. Shrinking NAND lithography is the most cost-effective method for increasing fab output and reducing die cost. Shrinking from 25nm to 20nm process will provide an approxi- mately 50 percent more gigabyte capacity from IMFT factories when compared to current technology. The new 20nm process maintains similar performance and endurance as the previous generation 25nm NAND technology. © Intel / Business Wire
Image: Intel and Micron deliver the industry‘s smallest, most advanced NAND flash process technology at 20nm. Shown is a 64Gb, or 8 Gigabyte (GB), die measuring just 118mm2
. The 64Gb Multi-Level Cell (MLC) NAND device
provides high capacity for smartphones, tablets, SSDs and more. © Intel / Business Wire
http://www.micron.com http://www.intel.com
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