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SEMATECH. “This agreement represents a significant achievement for SEMATECH’s EMI consortium, and illustrates our continuing commitment to develop and deliver the infrastructure required for this critical next-generation technology.”

It will be very challenging for state-of-the-art 193nm immersion lithography techniques to pattern chips beyond the 22nm HP technology generation. EUVL, with a wavelength of only 13.5nm, is widely consi- dered the best next technology generation following

deep ultraviolet lithography. The EUV masks used for sub-22 nm patterning must be free of defects to avo- id transferring them onto chip circuits – but current metrology tools are generally ineffective at finding defects below 32 nm node requirements. http://www.sematech.org http://smt.zeiss.com

10-07/08 :: July/August 2010

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