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CML Micro introduces a compact, flexible amplifier for next-generation ISM-band designs
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ML Micro, a specialist in the design, development and supply of mixed-signal, RF and microwave semiconductors for global
communications markets, has launched CMX90A002, a compact power amplifier for next-generation ISM-band radio designs. Designed for engineers developing new sub-GHz wireless products, the CMX90A002 combines greater power-supply flexibility with a smaller footprint, simplifying component selection and integration across a wide range of architectures.
Its broad frequency range encompasses the widely used European 868 MHz and North American 915 MHz bands, allowing engineers to address multiple regional markets and end-product requirements using a common amplifier platform. It is particularly suited to high-volume, low- power products such as smart meters, automatic meter-reading equipment, wireless sensor networks, IoT modules and
industrial monitoring technologies, where extended range and reliable in-building coverage are important.
As the newest product in CML Micro’s established amplifier family, the CMX90A002 delivers RF and thermal performance comparable with the CMX90A003 and CMX90A004 in a significantly
smaller package. Measuring just 3×3mm, it has a PCB footprint approximately 44 per cent smaller than the 4×4mm devices in the existing product family, helping engineers reduce board space and develop more compact end- products.
The device also provides greater supply- voltage flexibility, so it can accommodate different battery technologies and regulated power supplies, as well as
voltage variations across the battery- discharge cycle. Engineers are able to use a common amplifier across products with different power architectures, simplifying
component selection and qualification, as well as reducing the need for multiple RF designs. The CMX90A002 can also be used as a booster amplifier to extend the wireless range of sub-GHz radios.
https://cmlmicro.com
Navitas and Microchip collaborate on 800V reference design for AI rack power
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s AI data centres scale to support high-power GPU clusters, the industry is shifting toward 800V DC rack power architectures to improve distribution efficiency, increase power density and support next-generation server designs. To help accelerate this transition, Navitas and Microchip have collaborated on an 800V DC-to-6V DC reference design for AI data centre rack power applications. The platform combines Microchip’s digital power control and security technologies with Navitas’ GaNFast gallium nitride (GaN) power devices to give developers a practical path to implement high-efficiency power conversion aligned with the Open Compute Project (OCP) 800V DC standard. Complete with reference hardware, software and design documentation, the solution helps reduce design risk, shorten development cycles and accelerate deployment of next- generation AI infrastructure. At the core of the reference platform
www.cieonline.co.uk
high-speed core and peripherals support fast, deterministic control loops for high frequency, high-efficiency DC/DC power conversion.
are Microchip’s dsPIC33AK Digital Signal Controllers (DSCs), TA100 CryptoAuthentication device, and Navitas’ GaNFast FETs. The devices offer library support for Commercial National Security Algorithm (CNSA) Suite 2.0 recommended post-quantum cryptographic (PQC) algorithms and feature hardware accelerated cryptographic functions needed in Open
Compute Project (OCP) power supplies and other connected real-time control designs. Powered by a 200 MHz 32-bit core with a double-precision floating-point unit (FPU), the dsPIC33AK256MPS306 family combines 78 ps high-resolution Pulse Width Modulators (PWMs) and multiple 12-bit Analogue-to-Digital Converters (ADCs) operating at up to 40 MSPS. The
This PDB is powered by 16 × NV6034, 650 V, 17 mΩ GaNFast FETs in a stacked half-bridge topology on the primary side. The DFN8×8 dual-side-cooled package extends the performance advantages of GaN by reducing thermal resistance, allowing higher continuous power operation while maintaining impressive efficiency. The PDB targets delivering up to 96 per cent peak efficiency at full load with 1 MHz switching frequency, enabling a power density of 2,100 W/in. Direct conversion from 800V DC to 6V DC combines both 800V DC to 50V DC and 50V DC to 6V DC conversion stages into one converter, delivering higher end-to- end efficiency.
https://navitassemi.com/
www.microchip.com
Components in Electronics October 2026 9
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