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Renesas expands GaN portfolio with first low-voltage GaN FETs for robotics and AI applications
R
enesas Electronics Corporation, a supplier of advanced semiconductor solutions, has expanded its GaN portfolio into low-voltage applications with its first family of 100V enhancement mode (E-mode) GaN-based discrete power transistors. The RTP100E005G1FL, RTP100E2P6G1FL, RTP100E1P8G1FL-DSC and RTP100E1P2G1FL-DSC low-voltage GaN FETs are said to deliver ultra-fast switching speeds and enhanced thermal performance in efficiency-critical, high power density applications, including AI data centres, humanoid robotics, factory automation and industrial motor drives, power tools and solar microinverters. The new GaN FETs are designed to achieve industry-leading hard- and soft-switching figure-of-merit (FOM) performance, delivering up to 35 per cent lower hard-switching FOM and up to 63 per cent lower soft-switching FOM than comparable GaN devices, according to the company. The low-voltage GaN devices also maintain a silicon-compatible footprint that allows for easy adoption into existing designs.
Using low-voltage GaN in 800V high- voltage direct current (HVDC) power architectures simplifies power conversion design, significantly reducing passive component size, switching losses and cooling requirements. At the system level, this translates to better efficiency, fewer
thermal management requirements and lower energy and BOM costs.
Built on Renesas’ recently expanded low- voltage E-mode GaN technology platform, this new transistor portfolio features ultra-fast GaN switching with low total gate charge (Qg) and output charge (Qoss) to minimize the overlap between voltage and current. It reduces energy lost in each conversion cycle across AI power supply units, motor drives and DC-DC power stages. The devices also
offer zero reverse recovery (Qrr = 0), which eliminates energy losses for immediate switching efficiency gains.
Fast switching increases power density and yields higher frequency operation by shrinking PCB footprint and reducing the size of magnetic and passive components, while low RDS(on) improves operating efficiency by curtailing conduction losses. Depending on application requirements and power- conversion architecture, the low-voltage GaN
devices can achieve up to 40–70 per cent lower switching losses and up to twice the power density at the system level. The new GaN transistors are offered in multiple standard MOSFET-compatible packages, allowing customers to quickly migrate from silicon MOSFET layouts for faster design implementation without significant PCB rework.
renesas.com
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