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AUTOMOTIVE ELECTRONICS FEATURE


Driving NXP’s vehicle network processors’ potential forward


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ind River recently announced software support for the latest NXP S32G processors, with its VxWorks and Wind River Helix Virtualization Platform board support packages (BSPs) being made readily available for them. With the addition of these BSPs, Wind River continues its commitment to enabling the development of secure and safe systems, including the existing enablement of the NXP S32V and i.MX8 family for automotive use cases. This comes as a result of new ambitions - carmakers have demonstrated that they can produce next-generation vehicles that are autonomous, connected and electric, but there remain several challenges that must be solved before these cars can be produced at mass scale. They require an enormous amount of compute power. Using traditional industry approaches, this would result in an array of IT servers and graphics processing units that could occupy the entire trunk of the vehicle. However, that would simply not be sustainable or cost effective. On top of that, security and safety certification become increasingly complex matters. Integrating traditional MCUs with high-performance application processors (themselves equipped with ASIL D functional safety support, and network acceleration), new NXP S32G processors manage data transmission around the vehicle, and protect safety critical applications; this enables service-oriented gateways for over-the-air (OTA) deployment of new capabilities and advanced edge-to-cloud analytics.


Wind River www.windriver.com


Staying current A 100v N-channel


MOSFET to power the vehicle forward


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oshiba has released a new 100V N-channel power MOSFET, suited to automotive equipment applications like load and power supply switches, and to enable the driving of motors. Ultimately, it’ll contribute to the increasingly electrified architecture of the vehicle.


Designated as the XK1R9F10QB, this MOSFET is the first available device in Toshiba’s new U-MOS X-H series, offering a trench structure, and fabricated using the company’s latest generation process. Encapsulated within a low-resistance TO-220SM(W) package, Toshiba highlights its levels


/ ELECTRONICS


of ON-resistance (RDS(on)), with a maximum value of 1.92mΩ at a VGS of 10V. This represents an improvement; a reduction of approximately 20 per cent when compared to current devices such as Toshiba’s TK160F10N1L, thereby helping to reduce power consumption and increase efficiency in automotive devices. The XK1R9F10QB also exhibits reduced switching noise due to the optimisation of its capacitance characteristics, helping to reduce EMI.


The new device can withstand a drain-source voltage (VDSS) of 100V, and is rated for a continuous drain


current (ID) of 160A, or 480A if pulsed (IDP). The device can be operated with a channel temperature of 175 degrees Celsius, and has a channel-to-case thermal impedance (Zth(ch-c)) of less than 0.4 degrees Celsius/W, improving thermal performance.


The XK1R9F10QB is qualified to AEC- Q101 for automotive applications, and a PSpice model is freely available to assist with rapid simulation. Toshiba has commenced on its mass shipments of the device.


Toshiba www.toshiba.com ELECTRONICS | MARCH 2020 11


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