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 


 


 


  These compact 19-inch, 3U rack-mount units are scalable up to 100kW+, supporting high current


processes and enabling the operation of large systems such as ion implantation, e-beam welding, additive manufacturing, proton therapy, and medical cyclotrons. The fully digital control loop, configurable via an intuitive user interface (UI), enables


flexibility and control of the output load variations, as well as easy firmware modifications. Programmable parameters, such as arc control, arc quench, and ramp time, enhance safety while improving end-system protection and uptime. Real-time diagnostics and datalogging capabilities enable users to monitor the status of


the power supply over time, while the black box reporting feature enables users to better understand the root cause of a shutdown should one occur. The WBQ utilises SiC-based wide bandgap technology to achieve efficiencies typically


exceeding 90% at full load, and it features a standard input voltage of 208VAC 3-phase, with an optional 400VAC version also available for global use. This also offers ripple levels as low as 0.01% and has a tight line/load voltage regulation of 0.05%.


  


   This features a compact chip-scale package with high


computing power, advanced security features and a radio architecture that supports Bluetooth LE, proprietary 2.4 GHz protocols and Bluetooth channel sounding in low-voltage operation for the first time. Developed for battery-powered medical devices such as


continuous glucose monitors (CGMs) and wearable biosensors, its supply voltage of only 1.2 to 1.7 volts allows it to be powered directly by silver oxide button cells – without additional voltage regulators. At its core is a 128 MHz Arm Cortex-M33 processor combined with a 128 MHz RISC-V


coprocessor, which provides accelerated calculations and energy-efficient processing. In addition, the SoC has 1 MB NVM and 192 KB RAM, enabling demanding real-time applications and wireless protocols to run simultaneously.


 


   According to the company, these


 losses and heat generation, lowers


are the first DIN rail power supplies to feature active load sharing in parallel operation. This enables high- power systems to be realised more quickly using fanless power supplies. The precise control balances the load between power supplies, ensuring even thermal distribution and thus optimal system reliability. The family currently includes


single-phase and three-phase models with 960 W. An efficiency level of 97% reduces energy





operating costs, and contributes to CO2 reduction. The reduced heat generation makes the compact design of a three- phase 960 W unit with a width of just 79mm possible. For applications with dynamic loads – such as motor control in intralogistics and robotics – the devices offer Dynamic BonusPower, which automatically adapts to the changing demands of the application. They also offer an MTBF of up to 325,000 hours and a minimum service life of 100,000 hours.


 


  41


 


        This compact product


delivers highly efficient power conversion and stable performance under high-voltage conditions, making it suitable for onboard chargers (OBCs) in electric vehicles (EVs) and power supply circuits in high-performance consumer devices. Resonant and snubber circuits are essential for efficient power conversion and suppressing current and voltage peaks. In both circuits, repeated exposure to high voltage and high current can cause even slight changes in component performance, leading to efficiency loss or heat generation and potentially causing malfunction or failure. Recent trends also show a shift in power supply switching devices from silicon MOSFETs to silicon carbide (SiC) MOSFETs, which enable higher efficiency and faster switching. SiC MOSFET applications require breakdown voltages of 1.2kV, driving demand for capacitors with ratings exceeding this specification. These applications, therefore, require capacitors that maintain stable performance across wide temperature ranges, minimise power loss, and withstand high operating voltages. The 1.25kV MLCC addresses these needs, supporting the latest SiC MOSFET technologies. The inherent advantages of C0G in accordance with EIA standards – low loss and stable capacitance over an operating temperature range from -55˚C to +125˚C – make the new product ideal for use in both resonant and snubber circuits. For design flexibility, the capacitance range spans from 4.7nF to 15nF, with a tolerance of ±1% to ±5%.


 


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