news digest ♦ Power Electronics
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Inverters are the essential boxes that take direct current from devices such as solar panels and batteries and turn it into alternating current for use in homes, businesses, and cars. But household inverters are big - roughly the size of a picnic cooler. Shrinking them down to something smaller than a small laptop, says Google, would enable more solar-powered homes, more efficient distributed electrical grids, and could help bring electricity to the most remote parts of the planet.
Raytheon demos prototyping of AESA/GaN technologies into Patriot radar
Technology promises 360 coverage, better reliability, and lower life cycle costs
Allegro MicroSystems Announces New SiC Schottky Barrier Diodes
Designed to Minimise Power Supply Loss in Large Data Processing Servers
Allegro MicroSystems has announced the release of a next generation series of SiC schottky barrier diodes, manufactured by Sanken Electric, Japan. The FMCA series achieves low leakage current and high speed switching at high temperatures. It is targeted at industrial and computer markets with end applications to include servers and those that require high frequency rectification circuits.
The FMCA series uses the next generation of power semiconductor SiC and a 650V breakdown voltage in a schottky barrier configuration, making it suitable for continuous current mode PFC circuits. These devices are capable of reducing the power loss that results from the recovery current. The diode’s high-speed switching capability and energy-saving functionality allows for the potential downsizing of equipment, says Allegro.
Key features include improved efficiency of the power supply with low recovery loss characteristics of the SiC-SBD, low-resistance with a high-speed switching SiC-MOSFET that realises a compact and highly efficient power supply and an increased current within high temperature environments to maintain stable switching due to the elimination of thermal runway. The FMCA series is available in a TO-220F package.
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www.compoundsemiconductor.net Issue VI 2014
Raytheon has demonstrated successful prototyping of Active Electronically Scanned Array (AESA) and GaN technologies into the US Patriot Air and Missile Defense System radar. In addition to enabling future 360 sensor coverage, these technologies will increase the defended area and decrease the time to detect, discriminate and engage threats, says Raytheon. GaN-based AESA technologies will also further improve reliability and lower life cycle costs for the Patriot radar.
“GaN-based AESA technologies represent the future of ground-based sensors and will have future application to Raytheon’s entire sensor portfolio,” said Ralph Acaba, vice president of Integrated Air and Missile Defense at Raytheon’s Integrated Defense Systems business.
Raytheon has been developin GaN for 15 years and has invested over $150 million to get this latest technology in the hands of the warfighter faster and at lower cost and risk. Raytheon has demonstrated the maturity of the technology in a number of ways, including exceeding the reliability requirement for insertion into the production of military systems. This maturation of GaN resulted in a Manufacturing Readiness Level (MRL) production capability of “8,” the highest level obtained by any organisation in the defense industry for this technology.
Raytheon is the prime contractor for both domestic and international Patriot Air and Missile Defense Systems and system integrator for Patriot Advanced Capability-3 missiles. The Patriot system is used by 12 nations around the globe.
Mitsubishi to Launch tiny SiC Power Factor Correction Module
Reduces power consumption and size of small motors for home appliances
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