news digest ♦ Lasers
Compound Semiconductors to be worth $104.55 Billion in 2020
Market expected to grow at 12.63 percent CAGR from 2014 to 2020
According to a new report published by MarketsandMarkets, the compound semiconductor market is expected to grow at a CAGR of 12.63 percent from 2014 to 2020, reaching $104.55 billion in 2020.
The compound semiconductor market includes materials such as III-V, II-VI, IV-IV groups of compound semiconductors, and sapphire. Beneficial features such as direct gap, wide range of band gaps, higher electron mobility, and low power consumption, mean compound semiconductors are finding wide application in LEDs; high speed and high power devices; lasers; sensors; and IR-visible-UVs.
The report ‹Compound Semiconductor Market by Type (III-V, II-VI, IV-IV, sapphire), Deposition Technology (CVD, MBE, HVPE, Ammonothermal, MOVPE, LPE, ALD), Product (Power, Opto- electronic), Application, and Geography-2013-2020’› covers the overall compound semiconductor market segmented into five major segments: compound semiconductor types, deposition technology, products, application, and geography.
MarketsandMarkets is a global market research and consulting company based in the US.
Inc, and the Research center for Applied Science in Taiwan have designed and made an InGaN VCSEL with a composition-graded electron blocking layer (GEBL).
In their study, published in Laser Physics Letters, they been demonstrated that laser output performance is improved by using a GEBL when compared to the typical VCSEL structure of a rectangular electron blocking layer.
The output power obtained at 20kAcm-2 and the enlarged slope efficiency. is enhanced
by a factor of 3.8 by the successful reduction of threshold current density from 12.6 to 9.2kA cm-2
Numerical simulation results also suggest that the improved laser output performances are due mainly to the reduction of electron leakage current and the enhanced hole injection efficiency in the multiple- quantum-well (MQW) active region.
‹Design and fabrication of a InGaN vertical-cavity surface-emitting laser with a composition-graded electron-blocking layer’ by BC Lin et al, appeared in Laser Phys. Lett. 11 085002 doi:10.1088/1612- 2011/11/8/085002
VI Systems gets US patent
for 40G VCSEL technology Patent also applies to visible and infrared LEDs
Lasers
Taiwanese researchers improve InGaN VCSELs
Composition-graded electron blocking layer boosts output power
Researchers from the National Chiao Tung University, the National Changhua University of Education, Advanced Optoelectronic Technology
100
www.compoundsemiconductor.net Issue VI 2014
VI Systems GmbH, a developer and producer of optical devices for data transmission, has received a US patent covering the material composition of optoelectronic devices including VI Systems’ 40 Gbit/s vertical cavity surface emitting laser (VCSEL).
The patent ‘Optoelectronic Device with a Wide Bandgap and Method of Making Same’, protects the company’s proprietary concept of ultra high- speed vertical VCSELs. The invention relates to semiconductor light emitting devices for visible and infra-red spectral ranges, and can therefore also be applied to LEDs targeting the bright red, orange, yellow, or green spectral ranges.
VI Systems’ offers engineering samples of its 40 Gbit/s VCSEL at 850nm wavelength as bare die chips or as fibre coupled test modules.
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