Power Electronics ♦ news digest
Raytheon to provide power systems for future electric aircraft
High temperature SiC technology central to MEA project
temperatures of above 300degC, allowing more compact modules and greater efficiency, which is perfect for commercial aircraft, breaking away from the traditional tradeoffs while providing great value for money.
Raytheon has been selected to provide power systems expertise as part of several major aerospace industry consortia, which are developing the More Electric Aircraft (MEA) of the future. This marks the company’s formal entry into the MEA market following Raytheon’s significant investment in commercial aviation power solutions.
Driven by demands to optimise aircraft performance, decrease operating and maintenance costs, and reduce gas emissions, the MEA concept provides for the utilisation of electric power for all non-propulsive systems that were traditionally driven by a combination of different secondary power sources such as hydraulic, pneumatic, mechanical and electrical.
Under the Aerospace Growth Partnership (a collaboration between Government and industry working together to secure the future of UK Aerospace), Raytheon’s involvement spans the full range of power architecture and product collaborative initiatives. which include: Power Off- take and Power Conversion for the More Electric Engine (SILOET II, Rolls-Royce), Electric Engine Start power delivery (POMOVAL, Labinal Power Systems), Motor Drive power delivery sub-systems (LAMPS, UTC), Dedicated HiTSiC Power Modules (R-PSM, Raytheon), and the Harsh Environment Health Monitoring Devices (HEEDS, AEC).
Central to Raytheon’s strategy is leveraging its unique HiTSiC (High Temperature Silicon Carbide) produced at its UK foundry, which excels at optimal power delivery in high density, high temperature power supplies.
Existing modules have a maximum operating temperature of around 150degC due to the limitations of silicon devices. As a result, large, heavy liquid cooling systems are required. Raytheon’s new silicon carbide can operate at
Steven Doran, Managing Director of Power and Control, Raytheon UK, commented: “Raytheon has a 25 year track record in electronic systems for harsh operating conditions where high current, power density, temperature and value are the key factors. The SWAP-V (Size, Weight, Power - Value) goal is being achieved through greater collaboration, with industry and academic experts in emerging technologies for harsh environments.”
Google’s $1m challenge to shrink inverters
Hint to competitors: use wide band gap semiconductors such as GaN and SiC
Google and the IEEE have announced an open competition ‘The Little Box Challenge› to build a smaller power inverter, with a $1m prize. The winning device will be the one that achieves the highest power density (plus a list of other specifications) while undergoing testing for 100 hours.
Google and IEEE are pointing to wide bandgap semiconductors such as Gallium Nitride (GaN) and Silicon Carbide (SiC) as the technologies most likely to achieve the power densities required. Wide bandgap suppliers Cree, EPC, GaN systems, Monolith Semiconductor, NXP, Rohm, Transphorm, and USCi are supporting the competition and have made web pages describing their technology, how it might enable contestants to win the competition, and opportunities for obtaining some of their devices.
Applicants contemplating competing in the prize Issue VI 2014
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