X-Max®


Extreme Breakthrough technology for high sensitivity SEM-EDS SE Image Boron map


X-Max Extreme Silicon Drift Detector is designed for ultra-high resolution and light element applications to deliver solutions beyond conventional elemental analysis.


 Extreme light element sensitivity  Surface science sensitivity  Materials characterization down to 1 kV


 EDS maps approaching FE-SEM imaging resolution


 Nano-characterization using bulk samples  Lithium detection


Lithium: LLZ* analysis


Detection and mapping of low concentration dissolved boron and chromium borides in Ni-coatings from a valve sample.


* Lithium Lanthanum Zirconate


For the latest application notes visit www.oxinst.com/extreme17


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