Compound Semiconductor June 2011

RF Electronics ♦ news digest

* 2.7-2.9GHz Band for air traffic control applications (pulse format: 100 µs, 10 % ; power gain: 13 ~ 14dB typical; efficiency of 55 to 60 %)

* 2729GN-270 — 280 W power (typical) * 2729GN-150 — 160 W power (typical)

* 2.7-3.1GHz Band for air traffic control applications (pulse format: 200 µs, 10%; power gain: 12 ~13 dB typical; efficiency of 50 to 55 %)

* 2731GN-200 — 220 W power (typical) * 2731GN-110 — 120 W power (typical)

* 3.1-3.5GHz Band for airborne tracking applications (pulse format: 300 µs, 10% ; power gain: 11 ~ 12 dB typical; efficiency of 45 to 50 %)

* 3135GN-170 — 180 W power (typical) * 3135GN-100 — 115 W power (typical

Sample units are available for evaluation now and additional information can be obtained by emailing GaN@Microsemi.com.

TriQuint to demonstrate key milestones in gallium nitride development

Together with customers and various US Government agencies, TriQuint is working to define the future of RF, where it believes GaN will play a key role. The firm will be showcasing its products and technologies at IMS 2011 between June 5 and 10

TriQuint Semiconductor, an RF solutions supplier and technology innovator, has announced several milestones related to its industry leading GaN developments.

“These are exciting times in the GaN development cycle and TriQuint is pushing the envelope by demonstrating key achievements in the path to broad industry consumption. We have standard products available today and continue to enhance

the reliability, manufacturability and performance of our GaN process technology. We intend to set a high bar for what customers should expect of GaN technology, customer service and semiconductor material experience,” said Thomas Cordner, TriQuint Vice President.

Together with researchers from the University of Notre Dame, TriQuint put its GaN NEXT Process, which is being developed with funds from DARPA and not yet commercially available, through stringent performance tests. The results of the testing demonstrated performance twice that of recently-claimed ‘best’ performance by University of California Santa Barbara. The paper, entitled, “State-of-the-Art E/D GaN Technology Based on an InAlN/AlN/GaN Heterostructure” itemises Ft>240GHz compared to the UCSB claim of Ft=120GHz. The paper also details Enhancement / Depletion integration with record DC and RF performances.

TriQuint’s commercial GaN foundry offering is now available on 100mm wafers in Limited Release. This release is designed for well-qualified customers with available resources prior to becoming a Full Release process. The latter will include the full complement of associated models, tools and support traditionally offered to TriQuint customers.

The firm’s GaN process technology has also been certified as a Department of Defence Category 1A ‘Trusted Foundry’ ensuring customers that TriQuint’s GaN process meets stringent product control and secure handling standards during all stages of circuit fabrication. Accreditation also creates an avenue for increased high security monolithic microwave integrated circuit (MMIC) business.

TriQuint has released several standard products based on its GaN process including:

* The T1G4005528-FS is an innovative discrete RF power transistor with exceptional performance from DC to 3.5 GHz. Ideal for narrow and wideband applications, the T1G4005528-FS is well suited for military and civilian radar, professional and military radio communications systems, test instrumentation, avionics and wideband or narrowband amplifiers.

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