54

nanotimes News in Brief

11-04 :: April/May 2011

NAND Flash Technology // Industry’s Smallest, Most Advanced 20-Nanometer Process

I

ntel Corporation and Micron Technology Inc. introduced a new, finer 20nm process technology

for manufacturing NAND flash memory. The new 20nm process produces an 8-gigabyte (GB) multi- level cell (MLC) NAND flash device, providing a high-capacity, small form factor storage option.

The growth in data storage combined with feature enhancements for tablets and smartphones is creating new demands for NAND flash technology, especially greater capacity in smaller designs. The new 20nm 8GB device measures just 118mm2

and enables a

30 to 40% reduction in board space (depending on package type) compared to the companies’ existing 25nm 8GB NAND device. A reduction in the flash storage layout provides greater system level efficiency as it enables tablet and smartphone manufacturers to use the extra space for end-product improvements such as a bigger battery, larger screen or adding ano- ther chip to handle new features.

Manufactured by IM Flash Technologies (IMFT), Intel and Micron’s NAND flash joint venture, the new 20nm 8GB device is a breakthrough in NAND process and technology design, further extending the companies’ lithography leadership. Shrinking NAND lithography to this technology node is the most cost-effective method for increasing fab output, as it provides approximately 50% more gigabyte capa- city from these factories when compared to current

technology. The new 20nm process maintains similar performance and endurance as the previous genera- tion 25nm NAND technology.

“Close customer collaboration is one of Micron’s core values and through these efforts we are con- stantly uncovering compelling end-product design opportunities for NAND flash storage,” said Glen Hawk, vice president of Micron’s NAND Solutions Group. “Our innovation and growth opportunities continue with the 20nm NAND process, enabling Micron to deliver cost-effective, value-added solid- state storage solutions for our customers.”

“Our goal is to enable instant, affordable access to the world’s information,” said Tom Rampone, vice president and general manager, Intel Non-Volatile Memory Solutions Group. “Industry-leading NAND gives Intel the ability to provide the highest quality and most cost-effective solutions to our customers, generation after generation. The Intel-Micron joint venture is a model for the manufacturing industry as we continue to lead the industry in process tech- nology and make quick transitions of our entire fab network to smaller and smaller lithographies.”

The 20nm, 8GB device is sampling now and ex- pected to enter mass production in the second half of 2011.