Technology


Electron collisions measurement technique breakthrough will see single electrons in quantum devices


Scientists at the National Physical Laboratory (NPL) have performed a controlled collision of single electrons in a semiconductor chip, revealing important new information about creating single-electron devices for quantum applications. Te experiment examines the interaction


between pairs of flying electrons as they meet in a miniature semiconductor particle collider. Te experiment has revealed a brief electrostatic ‘push’ that takes place between electrons, which is large enough to change the electrons’ path. Tese results have not been seen in


previous experiments, since the electric field surrounding each injected electron is typically ‘neutralised’ by the re-arrangement of charges nearby. Te Coulomb repulsion


was activated here by injecting electrons into unscreened regions far from other conduction electrons. “The interaction happens on a very


short timescale, a few picoseconds, so the timing requirements are challenging. It was exciting to see such an elementary effect, from both a physics and a device engineering perspective,” said Jonathan Fletcher, Senior Scientist at NPL. While working with theorists on a


model, the team realised that more subtle details present in the data can be explained by considering the microscopic behaviour of electron pairs in a strong magnetic field. “The collision is not so easy to


understand when the electron arrival time is slightly mismatched; the electrons repel


but still follow similar trajectories. These effects are actually present in our model, which gives us some confidence that we understand them,” said Masaya Kataoka, Principal Scientist at NPL. Harnessing Coulomb interactions


between electrons will be a powerful way to control devices at high speeds and to create the non-linear effects required for quantum circuit elements based on electron quantum optics, a possible platform for quantum sensing or information processing. The experiments are done in


collaboration with Korea’s Advanced Institute of Science and Technology, Instituto de Fisica Interdisciplinary Sistemas Complejos IFISC of Spain, and the University of Cambridge, the UK.


ZTE launches a new-generation ultra-high-bandwidth mmWave active antenna unit


ZTE and Tailand AIS have launched a new- generation ultra-large-bandwidth millimeter wave active antenna unit (AAU), the world’s first to support bandwidth of 1.2GHz to 1.6GHz. Te peak rate of single-sector MUs reaches a downlink of 22.01Gbps and 4.32Gbps in the uplink, exceeding industry average. Tis milestone was celebrated at the joint


innovation centre in Bangkok. During the on-site live demonstration, the NR-DC mode was used along with the 1.2GHz bandwidth millimeter-wave spectrum owned by AIS. Millimeter-wave refers to frequencies between 24GHz and 300GHz (microwave to infra- red), offering more spectrum resources. Te ultra-large bandwidth and high capacity of this single AAU will help operators to make full use of their millimeter-wave spectrum potential. AIS possesses millimeter-wave spectrum


resources with 1.2GHz bandwidth and a strong demand for large-bandwidth millimeter-wave equipment. However, the typical maximum OBW of millimeter-wave in the industry is 800MHz, which makes it uneconomical for operators to use mmWave. With the launch of ZTE’s new-generation ultra-high-bandwidth millimeter-wave


ZTE and AIS demo of mmWave AAU in Bangkok


product, AIS can maximise these spectrum resources whilst increasing network capacity. Also, when combined with industry application requirements, this technology will enable AIS to help develop vertical industry business opportunities. AIS and ZTE plan to continue their


joint developments, explore innovative technologies, verify solutions and improve network performance. Te partnership’s next step is to aid the digital transformation in


many industries, and also build “the best 5G network in Southeast Asia”. ZTE’s AAU series provides a wide range


of options by differentiating products in three aspects: the number of transmitting and receiving channels, transmitting power and bandwidth, and supporting both sub-6G and mmWave. In this way, operators can meet corresponding requirements of different capacity and price/performance ratio in various setups.


www.electronicsworld.co.uk June 2023 05


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