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easing cooling requirements – critical for high-density AI systems. The proposed 800V architecture is shown in Figure 1.
Technology options for 800VDC intermediate bus conversion Several approaches exist to step down 800VDC to intermediate voltages such as 54V or 12V for rack-level distribution: • Silicon Carbide (SiC) solutions SiC devices easily handle the 1200V breakdown voltage required for 800VDC systems, providing the necessary operating margin. However, SiC is typically limited to lower switching frequencies, which constrains achievable power density compared to GaN-based designs.
• Conventional GaN solutions (650V to 750V)
Most commercially available GaN devices are rated for 650V to 750V, insufficient for the proposed 800V architecture. To overcome this, some manufacturers suggest stacked topologies – using two-in-series half-bridges (four 650V GaN devices total). While this enables high- frequency operation, it introduces signifi cant drawbacks, including control complexity, reliability risks from input voltage imbalance, increased footprint and higher conduction losses, which reduces efficiency and increasing cost.
• High-voltage GaN solutions (1250V, 1700V and above) GaN HEMTs built by Power Integrations using its proprietary PowiGaN technology offer industry’s highest voltage rating, eliminating the need for stacked designs. This simplifi es system architecture while delivering high-frequency operation, robust reliability and superior efficiency – making 1700V PowiGaN, which is already shipping, an ideal solution for 800V and higher-voltage DC architectures.
PowiGaN-based IBC architectures With the 1250V PowiGaN cascode switch, power supply designers can confi dently specify VDS(PEAK)
of 1000V,
Table 1: Comparing a stacked approach with the single half-bridge LLC using 1250V PowiGaN
Table 2: Comparing 1250V PowiGaN and 1200V SiC MOSFETs
while maintaining the industry- standard 80% de-rating for reliability. For applications requiring even higher voltages – up to 1360VDS(PEAK
) – the
1700V PowiGaN cascode switch enables similarly high-efficiency designs at elevated voltage levels. The proposed structure of the
intermediate bus converter (IBC) using PowiGaN is shown in Figure 2. The advantages of PowiGaN become clear when comparing architectures. Table 1 summarises the differences
between a 650V e-mode GaN stacked approach and a single half-bridge LLC design using 1250V PowiGaN. The PowiGaN solution eliminates complexity, reduces footprint and improves efficiency. Table 2 compares 1250V PowiGaN
with 1200V SiC MOSFETs, showing that PowiGaN enables higher-frequency LLC operation at similar RDS(ON)
,
delivering superior power density and thermal performance.
Beyond 800V-2200V PowiGaN Recently, Power Integrations raised the bar again, with the introduction of 2200V PowiGaN technology. Emerging applications include next-generation AI data centres, where industry roadmaps point toward 1500V distribution architectures, as well as future EV battery and auxiliary power systems operating at increasingly higher output voltages (48V). This milestone breakthrough extends
the reach of GaN into voltage ranges traditionally served by SiC, enabling a compelling high-frequency alternative for applications such as solar, HVDC and advanced industrial power conversion.
www.power.com
www.electronicsworld.co.uk October 2026 07
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