Power
silicon-based MOSFETs but who now find themselves working with devices built using new materials such as gallium nitride (GaN). In the fastest switching GaN-based designs, for example, minimizing parasitic inductance through optimized PCB layout can be critical. In addition, special care should be taken when using oscilloscopes to measure super-fast switching waveforms.
Evolution of the FET
Of course, the FET concept is not new. In fact, Polish-American physicist Julius E. Lilienfeld filed the patent for the first field effect transistor almost 100 years ago. Even the super-junction FET has been with us since 1984. Things have clearly come a long way (not least with respect to switching speeds), but as a mature technology we’ve already enjoyed a lot of ‘easy wins’ in terms of the efficiency and size reduction potential for general-purpose devices. That is why there is a move to application-specific FETs or ASFETs. ASFETs will often trade one parameter off against another to allow designers to choose the device best matched to the specific requirements of the target system. For example, designers of switched mode power supplies will look to balance dynamic switching parameters for peak efficiency with low on-resistance for high load conditions. In contrast, engineers focused on motor control, where switching frequencies are typically an order of magnitude lower, will be more concerned about maximum current ratings and thermal performance in case of locked rotor conditions, as well as managing EMI effects. And those working on hot-swap, soft-start & live insertion applications will pay primary attention to the FETs safe operating area (SOA). At the other end of the power scale are the low-current MOSFETs found in applications such as DC-DC conversion, load switching and level shifting. Combining high-speed operation with advanced packaging techniques has allowed manufacturers to develop devices that are specifically designed to optimize performance while addressing power density and miniaturization requirements. Such a diverse range of applications is testimony to the success and versatility of FET technology but clearly the days of generic devices and a “one size fits all” approach have long gone. FET evolution also means the availability of new options fabricated from wide bandgap (WBG) materials such as gallium nitride. Having already achieved great success in the RF power arena, these technologies are becoming commercially viable in other demanding power applications across the computing, industrial, and telecommunications sectors. Here their combination of ultra-low
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high-voltage on-resistance, excellent switching figures of merit, thermal stability and high- frequency operation makes them ideal for AC-DC conversion, DC-DC conversion, power factor correction (PFC) and other high-power, high-density, ultra-high-speed switching applications. Furthermore, GaN is becoming the go-to technology for delivering the performance and efficiency demanded by the automotive industry for onboard charging, DC- DC conversion and traction inverter designs in electric vehicles.
Supporting the engineer So what support is available for an engineer who, willingly or reluctantly, finds themselves tasked with deploying power MOSFETs, small- signal MOSFETs or GaN FETs. Well, the good news is that through online design tools, FAEs, quick learning videos, comprehensive selection guides and in-depth application notes, engineers have access to more resources to help them select and design with FETs than ever before. Joining these resources, is the latest edition of Nexperia’s MOSFET and GaN FET Application Handbook. This design guide brings together reference materials relating to using MOSFETs and GaN FETs in real world systems based on expertise that Nexperia’s engineering teams have built up over many years.
The Nexperia MOSFET and GaN FET Application Handbook can be downloaded or ordered in hard copy by visiting:
https://efficiencywins.nexperia.com/ efficient-products/mosfet-and-gan-fet-
application-handbook.html
www.nexperia.com
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Components in Electronics
November 2022 37
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