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Interactive datasheets from Nexperia put MOSFET behaviour analysis at engineers’ fingertips
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experia, the essential semiconductor specialist, says that it has raised the bar in semiconductor engineer design support with the release of next-generation interactive datasheets to accompany its Power MOSFETs. By manipulating interactive sliders within the datasheets, users can manually adjust the voltage, current, temperature and other conditions for their circuit application and watch how the operating point of a device dynamically responds to these changes.
These interactive datasheets effectively offer a type of graphical user interface to a circuit simulator, using Nexperia’s advanced electrothermal models to calculate the
operating point of a device. In addition, they allow engineers to visualize immediately the interaction between parameters such as gate voltage, drain current, RDS(on) and temperature. Their collective contribution to the device behaviour is then displayed dynamically in tables or graphs. As a result, Nexperia says that its interactive datasheets can significantly increase productivity by eliminating the time needed for an engineer to perform manual calculations or set up and debug a circuit simulation.
The datasheet is commonly the first port of call when a design engineer is looking to select a device for an application. However, while they contain a wealth of information, including the minimum, maximum and typical
specifications across dozens of device parameters, it is often difficult to determine how these are interrelated, according to Nexperia. Consequently, engineers must perform time-consuming manual calculations or set up a circuit simulator using models provided by the manufacturer (assuming these are available) to thoroughly investigate a device’s behaviour. Even then, many manufacturers’ simulation models do not show the effect of temperature changes on device behaviour. The new interactive datasheets from Nexperia support engineers by showing real-time interaction across different parameters as they are manually
changed with the easy-to-use datasheet sliders.
Try a live interactive datasheet at
https://www.nexperia.com/interactive- datasheet?id=BUK9M12-60E
https://www.nexperia.com/ Silicon Carbide E-Fuse demonstrator protects power electronics in electric vehicles
igh-voltage electrical subsystems throughout Battery Electric Vehicles (BEVs) and Hybrid Electric Vehicles (HEVs) require a mechanism to protect the high-voltage distribution and loads in the event of an overload condition. To provide BEV and HEV designers with a faster and more reliable high-voltage circuit protection solution, Microchip has announced the E-Fuse Demonstrator Board, enabled by silicon carbide (SiC) technology, available in six variants for 400–800V battery systems and with a current rating up to 30 amps. The E-Fuse demonstrator can detect and
interrupt fault currents in microseconds, 100–500 times faster than traditional mechanical approaches because of its high- voltage solid-state design. The fast response time substantially reduces peak short-circuit currents from tens of kilo-amps to hundreds of amps, which can prevent a fault event from resulting in a hard failure.
“The E-Fuse demonstrator provides BEV/HEV OEM designers with a SiC-based technology solution to jumpstart their development process with a faster, more reliable method for protecting power electronics,” said Clayton Pillion, vice president of Microchip’s silicon carbide business unit. “The E-Fuse solid-state
design also alleviates long-term reliability concerns about electromechanical devices because there is no degradation from mechanical shock, arcing or contact bounce.”
With the E-Fuse demonstrator’s resettable feature, designers can easily package an E-Fuse in the vehicle without the burden of design-for-serviceability constraints. This reduces design complexities and enables flexible vehicle packaging to improve BEV/HEV power system distribution. OEMs can accelerate development of SiC- based auxiliary applications with the E-Fuse demonstrator because of the built in Local
Interconnect Network (LIN) communication interface. The LIN interface enables the configuration of the over-current trip characteristics without the need to modify hardware components, and it also reports diagnostic status.
www.microchip.com
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www.techsil.co.uk Components in Electronics May 2023 9
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