Quantitative Electrical Measurements
Figure 5 : Topography (a) and resistance (b) data for an SRAM sample. Some of the n-doped regions and p-doped regions are labeled in the topography image. These correspond to the clear delineation between the n- and p-areas in the resistance image. Image width = 30 µm.
location. Many AFM systems cannot image the same location using as many imaging modes as the Nano-Observer AFM. For the Nano-Observer AFM, the tip holder can be used for multiple modes and the controller can switch between techniques, providing data for diff erent properties at the same sample location. T is is illustrated by the example in Figure 6 of a standard RAM sample. Oscillating, KFM, and ResiScope resistance modes were applied consecu- tively. Using KFM, the surface potential can be mapped for a sample and compared to resistance data from the ResiScope. T e areas of greater conductivity (dark areas in the resistance image) have a lower surface potential. T is is another illustration of how the material properties do not correspond to the topology of a sample. For the example in Figure 6 , the KFM data were acquired in a dual pass mode.
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Figure 6 : Topography (oscillating mode) (a), KFM surface potential (b), and ResiScope mode (c) data acquired simultaneously for a RAM chip sample. Image width = 50 µm.
Other modes such as EFM or MFM can be measured consecu- tively with the ResiScope mode as needed.
www.microscopy-today.com • 2015 November
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