Feature: Railways
Figure 4: OVX-6400
Figure 2: CBS-10K
Figure 3: CRS-2000 Figure 5: FlexStorm
• High-voltage operation and thermal endurance: SiC’s ability to operate at elevated voltage levels and temperatures adds to its suitability for the railway industry;
• High breakdown voltage: SiC has a breakdown voltage ten times greater than silicon, which is crucial for handling high-voltage applications, making SiC devices ideal for power supplies that require robust voltage management;
• Superior thermal conductivity: SiC’s thermal conductivity is approximately three times better than that of silicon, allowing SiC devices to operate efficiently at temperatures above 175ºC, surpassing the limits of traditional Si-based packages. In addition, SiC diodes offer the
following advantages: • Reduced reverse recovery effect: SiC diodes exhibit a minimal reverse recovery effect, which significantly cuts down switching losses, leading to increased efficiency compared to Si diodes at the same switching frequency, and enhanced power density versus Si diodes, allowing for higher switching frequencies and smaller inductive components.
As for SiC MOSFETS, advantages
include: • Reduced on-resistance: For applications over 900V, SiC MOSFETs show a substantial reduction in specified on-resistance, enabling higher current density per device, with a consequent reduction in size and weight;
• Stable on-resistance with temperature: SiC MOSFETs exhibit less variation in on-resistance with temperature changes. Tis stability allows for the design of equipment that operates effectively at higher temperatures;
• Lower internal capacitance: SiC MOSFETs have significantly reduced internal capacitance, particularly in reverse capacitance (Cgd
), facilitating extremely high switching speeds.
GaN technology developments GaN is set to revolutionise RF and communication systems. Its application in high-frequency and high-power amplifiers promises substantial improvements in efficiency and performance. GaN technology is also a game-changer
in electric mobility, which includes railways and electric vehicles. Here it
enhances efficiency and performance, contributing to reduced carbon emissions and fostering a more sustainable transportation ecosystem. In the energy sector, GaN’s impact
extends to energy-related applications like photovoltaics (PV), DC microgrids and lighting, addressing key climate and energy challenges. GaN will continue to be developed.
For example, the company Premium PSU is at the forefront of integrating GaN technology into electronic devices, collaborating with the ALL2GaN project. Tis initiative represents a significant stride in harnessing GaN’s potential to enhance electronic device performance across various sectors, with a notable focus on railway applications. Te partnership with ALL2GaN underscores a commitment to developing affordable and eco-friendly GaN technologies.
Table 1: Comparison between Si and SiC technology parameters 32 March 2024
www.electronicsworld.co.uk
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