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HyperRAMTM - Best DRAM choice for IoT application


F


or IoT applications, various design considerations must be met in order to gain widespread adoption in the market - low cost, low power consumption, and computing efficiency being amongst the most important.


For battery-powered devices such as smart meters, battery life has become key to the success of the product, in addition to easy-to-use human interface. As low power consumption grows increasingly important, manufacturers need to consider the other low-power peripheral components, not just power consumption MCU to achieve long battery life.


Many mobile devices such as tablets or smart watches have similar architecture with Wi-Fi/BT and cellular modules in charge of communication. Sensors (like the touch panel) are dedicated to collect information, sending it to the application processor. NOR/ NAND is responsible for storing code/ data while DRAM is for processing temporarily.


Many MCU suppliers are developing new-generation, higher performance, lower power consumption MCUs to meet


market demand. Additionally, from the overall system design perspective, the DRAM working with the MCU also requires new options to provide better performance than existing SDRAM, Low Power SDRAM and CRAM/PSRAM. These DRAM standards have been defined a long time ago and could not keep pace with the latest technology.


In 2014, due to growing demand, Cypress Semiconductor released HyperBusTM. Winbond Electronics joined in with the release of HyperRAMTM 32Mb/64Mb/128Mb density products. HyperRAMTM, which supports the HyperBusTM interface, has only 13 signal IO pins, which can greatly simplify the PCB layout design. When designing


end products, it allows the MCU to have more pin out for other purposes or allows MCU with fewer pins for better cost-effectiveness. As Fig.1 shows, HyperRAMTM has fewest pins to achieve approximately the same throughput (333MB/s), compared to similar DRAM, like Low Power DRAM, SDRAM and CRAM/PSRAM.


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EIA Supplement 2021 25


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